Method for forming patterned media for a high density data storage device

ABSTRACT

Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.

PRIORITY CLAIM

This application claims priority to the following U.S. ProvisionalPatent Application:

U.S. Provisional Patent Application No. 60/693,950, entitled “Media forWriting Highly Resolved Domains,” filed Jun. 24, 2005.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

This application incorporates by reference all of the followingco-pending applications and the following issued patent:

U.S. patent application Ser. No. 11/177,550, entitled “Media for WritingHighly Resolved Domains,” filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/177,639, entitled “Patterned Mediafor a High Density Data Storage Device,” filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/177,599, entitled “High Density DataStorage Devices with Read/Write Probes with Hollow or Reinforced Tips,”filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/177,731, entitled “Methods forForming High Density Data Storage Devices with Read/Write Probes withHollow or Reinforced Tips,” filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/177,642, entitled “High Density DataStorage Devices with Polarity-Dependent Memory Switching Media,” filedJul. 8, 2005;

U.S. patent application Ser. No. 11/178,060, entitled “Methods forWriting and Reading in a Polarity-Dependent Memory Switching Media,”filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/178,061, entitled “High Density DataStorage Devices with a Lubricant Layer Comprised of a Field of PolymerChains,” filed Jul. 8, 2005;

U.S. patent application Ser. No. 11/004,153, entitled “Methods forWriting and Reading Highly Resolved Domains for High Density DataStorage,” filed Dec. 3, 2004;

U.S. patent application Ser. No. 11/003,953, entitled “Systems forWriting and Reading Highly Resolved Domains for High Density DataStorage,” filed Dec. 3, 2004;

U.S. patent application Ser. No. 11/004,709, entitled “Methods forErasing Bit Cells in a High Density Data Storage Device,” filed Dec. 3,2004;

U.S. patent application Ser. No. 11/003,541, entitled “High Density DataStorage Device Having Erasable Bit Cells,” filed Dec. 3, 2004;

U.S. patent application Ser. No. 11/003,955, entitled “Methods forErasing Bit Cells in a High Density Data Storage Device,” filed Dec. 3,2004;

U.S. patent application Ser. No. 10/684,883, entitled “Molecular MemoryIntegrated Circuit Utilizing Non-Vibrating Cantilevers,” filed Oct. 14,2003;

U.S. patent application Ser. No. 10/684,661, entitled “Atomic Probes andMedia for high Density Data Storage,” filed Oct. 14, 2003;.

U.S. patent application Ser. No. 10/684,760, entitled “Fault TolerantMicro-Electro Mechanical Actuators,” filed Oct. 14, 2003;

U.S. patent application Ser. No. 10/685,045, entitled “Phase ChangeMedia for High Density Data Storage,” filed Oct. 14, 2003;

U.S. patent application Ser. No. 09/465,592, entitled “Molecular MemoryMedium and Molecular Memory Integrated Circuit,” filed Dec. 17, 1999;and

U.S. Pat. No. 5,453,970, entitled “Molecular Memory Medium and MolecularMemory Disk Drive for Storing Information Using a Tunnelling Probe,”issued Sep. 26, 1995 to Rust, et al.

COPYRIGHT NOTICE

A portion of the disclosure of this patent document contains materialwhich is subject to copyright protection. The copyright owner has noobjection to the facsimile reproduction by anyone of the patent documentor the patent disclosure, as it appears in the Patent and TrademarkOffice patent file or records, but otherwise reserves all copyrightrights whatsoever.

TECHNICAL FIELD

This invention relates to high density data storage using molecularmemory integrated circuits.

BACKGROUND

In 1965, Gordon Moore observed an exponential growth in the number oftransistors in an integrated circuit and predicted that the trend wouldcontinue—and it has. Software developers have pushed each generation ofintegrated circuit to the limits of its capability, developing steadilymore data intensive applications, such as ever-more sophisticated, andgraphic intensive applications and operating systems (OS). Eachgeneration of application or OS always seems to earn the derisive labelin computing circles of being “a memory hog.” Higher capacity datastorage, both volatile and non-volatile, has been in persistent demandfor storing code for such applications. Add to this need for capacity,the confluence of personal computing and consumer electronics in theform of personal MP3 players, such as the iPod, personal digitalassistants (PDAs), sophisticated mobile phones, and laptop computers,which has placed a premium on compactness and reliability.

Nearly every personal computer and server in use today contains one ormore hard disk drives for permanently storing frequently accessed data.Every mainframe and supercomputer is connected to hundreds of hard diskdrives. Consumer electronic goods ranging from camcorders to TiVo® usehard disk drives. While hard disk drives store large amounts of data,they consume a great deal of power, require long access times, andrequire “spin-up” time on power-up. FLASH memory is a more readilyaccessible form of data storage and a solid-state solution to the lagtime and high power consumption problems inherent in hard disk drives.Like hard disk drives, FLASH memory can store data in a non-volatilefashion, but the cost per megabyte is dramatically higher than the costper megabyte of an equivalent amount of space on a hard disk drive, andis therefore sparingly used.

Phase change media are used in the data storage industry as analternative to traditional recording devices such as magnetic recorders(tape recorders and hard disk drives) and solid state transistors(EEPROM and FLASH). CD-RW data storage discs and recording drives usephase change technology to enable write-erase capability on a compactdisc-style media format. CD-RWs take advantage of changes in opticalproperties (e.g., reflectivity) when phase change material is heated toinduce a phase change from a crystalline state to an amorphous state. A“bit” is read when the phase change material subsequently passes under alaser, the reflection of which is dependent on the optical properties ofthe material. Unfortunately, current technology is limited by thewavelength of the laser, and does not enable the very high densitiesrequired for use in today's high capacity portable electronics andtomorrow's next generation technology such as systems-on-a-chip andmicro-electric mechanical systems (MEMS). Consequently, there is a needfor solutions which permit higher density data storage, while stillproviding the flexibility of current phase change media solutions.

BRIEF DESCRIPTION OF THE DRAWINGS

Further details of the present invention are explained with the help ofthe attached drawings in which:

FIG. 1A is a cross-sectional view of a portion of an embodiment of amedia device including a recording media comprising GST in accordancewith the present invention, the portion being in an unwritten state.

FIG. 1B is a cross-sectional view of an embodiment of an over-layerhaving substantially anisotropic resistivity for use with media inaccordance with the present invention.

FIG. 1C is a cross-sectional view of the portion of FIG. 1A including adata bit.

FIG. 2 is a phase change chart of an exemplary phase change material foruse with systems and methods in accordance with the present invention.

FIG. 3 illustrates heating characteristics of the media device of FIG.1A.

FIG. 4A is a perspective view of an embodiment of a lubricant for usewith media in accordance with the present invention.

FIG. 4B is a perspective view of an embodiment of a lubricant disposedover an adhesion layer for use with media in accordance with the presentinvention.

FIG. 5A is a cross-sectional view of a portion of an alternativeembodiment of a media device in accordance with the present invention,the portion being in an unwritten state.

FIG. 5B is a cross-sectional view of the portion of FIG. 5A including adata bit.

FIG. 5C is a cross-sectional view of the portion of FIG. 5B wherein theportion including the bit is erased so that the portion is in anunwritten state.

FIG. 6A is a cross-sectional view of a portion of still furtherembodiments of a media device in accordance with the present invention,the media device having isolated cells.

FIGS. 6B-6D are cross-sectional views of process steps of an embodimentof a method in accordance with the present invention for forming themedia device of FIG. 6A.

FIGS. 6F-6H are cross-sectional views of process steps of an alternativeembodiment of a method in accordance with the present invention forforming the media device of FIG. 6A.

FIG. 6I illustrates an alternative technique for planarizing a surfaceof a film stack, the technique being usable in still another embodimentof a method in accordance with the present invention for forming themedia device of FIG. 6A.

FIG. 6J is a cross-sectional view of a portion of a still furtherembodiment of a media device in accordance with the present invention,the isolated cells having tapered sidewalls.

FIG. 7A is a cross-sectional view of a portion of an alternativeembodiment of a media device in accordance with the present invention,the media device having isolated cells and a continuous recording media.

FIGS. 7B and 7C are cross-sectional views of process steps of anembodiment of a method in accordance with the present invention forforming the media device of FIG. 7A.

FIGS. 7D and 7E are cross-sectional views of process steps of analternative embodiment of a method in accordance with the presentinvention for forming the media device of FIG. 7A.

FIG. 8A is a cross-sectional view of a portion of an alternativeembodiment of a media device in accordance with the present invention,the media device having isolated cells including a recording mediacomprising a polarity-dependent memory layer.

FIGS. 8B and 8C are cross-sectional views of process steps of anembodiment of a method in accordance with the present invention forforming the media device of FIG. 8A.

FIG. 8D is a cross-sectional view of a portion of a still furtherembodiment of a media device in accordance with the present invention,the isolated cells having tapered sidewalls.

FIG. 9A is a cross-sectional view of a portion of an embodiment of asystem in accordance with the present invention.

FIG. 9B is a cross-sectional view of a portion of an alternativeembodiment of a system in accordance with the present invention.

FIGS. 10A-10F illustrates a series of film stacks arranged inprogressive processing order for forming an embodiment of a tip for usewith media in accordance with the present invention.

FIGS. 10G-10I illustrates a series of film stacks arranged inprogressive processing order for forming an alternative embodiment of atip for use with media in accordance with the present invention.

FIG. 11A is a representation of an embodiment of a sample track andservo information arrangement within the track in accordance with thepresent invention.

FIG. 11B is a expanded view of a track identification block from therepresentation of FIG. 11A across a range of tracks.

FIGS. 11C-11D are embodiments of sync mark patterns that can be used inservo information arrangement patterns such as shown in FIG. 11A.

FIGS. 11E-11F are embodiments of position error signal (PES) schemesthat can be employed in servo information arrangement patterns such asshown in FIG. 11A.

DETAILED DESCRIPTION

Media Comprising Phase Change Material

FIG. 1A is a cross-section of a portion of a media device 150 in anunwritten state for use with embodiments of systems and methods inaccordance with the present invention. The media device 150 includes asubstrate 152, an under-layer 154 disposed over the substrate 152, arecording media 156 formed over the under-layer, and an over-layer 158formed over the recording media 156. The substrate 152 can comprisesilicon (Si), gallium arsenide (GaAs), or some other semiconductormaterial. The under-layer 154 can comprise a highly conductive material,the under-layer 154 drawing heat away from the recording media 156 tofacilitate fast cooling of the recording media 156. In an embodiment,the under-layer 154 can comprise tungsten, while in other embodimentsthe under-layer 154 can comprise one or more of platinum, gold,aluminum, and copper. In still other embodiments, the under-layer 154can comprise some other material having high conductivity. It may bedesired that the material forming the under-layer 154 further be chosenbased on additional properties, such as thermal expansioncharacteristics (a low thermal expansion coefficient being preferable),adhesion characteristics (high adhesion being preferable), anduniformity of deposition, smoothness, etc. One of ordinary skill in theart can appreciate the myriad different materials having highconductivity and one or more favorable properties for forming theunder-layer. Where it is desired that the under-layer 154 be insulatedfrom the substrate 152, there may be an insulating layer 186 disposedbetween the under-layer 154 and the substrate 152. For example, in anembodiment the insulating layer 186 can comprise one of an oxide and anitride material. The insulating layer 186 insulates the media 156 fromthe substrate 152 both thermally and electrically.

In an embodiment, the recording media 156 can comprise a phase changematerial such as a chalcogenide comprising one or more of germanium(Ge), antimony (Sb), and tellurium (Te) (also referred to herein as“GST,” wherein “GST” also refers to stoichiometric andoff-stoichiometric GeSbTe alloys). As a portion of the phase changematerial is heated beyond some threshold temperature and then cooledvery quickly (i.e., quenched) the phase of the material changes from acrystalline state to a disordered state. Conversely, if the phase changematerial is heated above some threshold and then allowed to cool slowly,the material will tend to re-crystallize. As a result of these phasechanges, the resistivity of the phase change material changes. Thisresistivity change is quite large in phase change materials and can bedetected by a tip 142 (see FIG. 1B) that is conductive or that includesa conductive coating by passing current through the tip 142 and themedia device 150. Phase change materials are well known in the art andcan be found disclosed in numerous references, for example U.S. Pat.Nos. 3,271,591 and 3,530,441 both issued to Ovshinsky and incorporatedherein by reference. In other embodiments, as described in detail below,the recording media can be an alternative material, such as apolarity-dependent memory material.

The media device 150 further includes an over-layer 158 comprising amaterial selected to prevent physical damage to the recording media 156and/or to the tip 142 when the tip 142 contacts the over-layer 158. Theover-layer 158 can comprise a material that is resistant to wear,thereby extending the lifetime of the over-layer 158 and/or the tip 142.The over-layer 158 can include a low conductance characteristic, and ahigh hardness characteristic. For example, in an embodiment theover-layer 158 can comprise titanium nitride (TiN), a hard material thatconducts poorly. However, it should be noted that it can be advantageous(as described in detail below) to employ a material that conductscurrent more readily through a film than across a film. Some metalnitrides, such as molybdenum nitride (MoN) and TiN are anisotropiccolumnar material that can exhibit such properties to a degree.

In still other embodiments, for example where a polarity-dependentmemory layer is used as a recording media, the over-layer 158 cancomprise diamond-like carbon (DLC), which has conductive properties thatcan be adjusted in the manufacturing process through a variety oftechniques. One such technique includes using a dopant such as nitrogenin the formation of the DLC. In still other embodiments, the over-layer158 can comprise an insulator, for example such as silicon nitride (SiN)or oxide. Where an insulator is used as an over-layer 158, currentapplied to the media device 150 from the tip must tunnel through theover-layer 158 before reaching the recording media 156; thus, theover-layer 158 should be sufficiently thin to limit the amount oftunneling required before a current can interact with the recordingmedia 156. For example, where silicon dioxide (SiO2) is used as atunneling oxide, the over-layer 158 can be approximately less than 10nm.

The media device 150 can be formed using traditional semiconductormanufacturing processes for depositing or growing layers of film insequence using deposition chambers (e.g., chemical vapor deposition(CVD) chambers, plasma vapor deposition (PVD) chambers) and/or furnaces,for instance. Alternatively, the media device 150 can be formed using ashadow mask. Where a shadow mask is used, a mask wafer that contains atleast one aperture is placed over a final wafer to form a media device150. The mask wafer and final wafer are then subjected to a depositionprocess. During the deposition process, chemicals pass through theshadow mask and are deposited to form a media device 150. Additionally,the media and/or media stack can be deposited over a lift-off resistlayer. The resist layer and excess media stack can be removed by placinga wafer on which the media device 150 is formed in a solvent bath thatdissolves the resist and allows excess material to be removed. One ofordinary skill in the art can appreciate the myriad different techniquesfor forming a media device 150.

In yet further embodiments the over-layer 158 can comprise a cermet-likematerial to limit shunting of current across the over-layer 158. Cermetsare combinations of insulators and metal conductors that form a matrix.The matrix can have a concrete-like structure, where the metal isanalogous to rocks in concrete and the insulator is analogous to the“glue” that holds the rocks together. It can also have a columnarstructure much like TiN. Either form will allow a relative anisotropicconductivity such that the current will preferably flow through theover-layer 158 rather than flow laterally across the over-layer 158. Instill other embodiments, the recording media 156 can be a cermet thatcomprises a phase change material as a conductor, surrounded by a matrixof an insulator. In still other embodiments, the recording media 156 cancomprise isolated dots of phase change material, surrounded byinsulating material. Discrete conductors can be arranged over the dots,electrically isolated from adjacent dots. In still other embodiments,the over-layer 158 can comprise a material that exhibits non-linearconductive properties with voltage, particularly those that haveincreasing conductivity with higher voltage potential. Such materialsinclude tin oxide (SnO). In still another embodiment, the over-layer 158can comprise a material that exhibits non-linear conductive propertieswith temperature, particularly those that have increasing conductivitywith higher temperature. Such materials include many semiconductors suchas silicon. Many of these alternative materials can be used togethersuch that the combination increases the anisotropic conductivitycharacteristic of the over-layer. Further, these over-layer materialscan be used sequentially, rather than mixed together, to enhance theperformance characteristics of the over-layer 158. For example, a verythin layer of carbon can be added over TiN to form a barrier tooxidization, as well as to improve lubricity of the surface.

FIG. 1B is a close-up view of a portion of one such over-layer 158comprising a co-deposited film for use with embodiments of a mediadevice 150 in accordance with the present invention. The over-layer 158can comprise a continuous or discontinuous cover layer disposed over therecording media 156 and having highly anisotropic conductancecharacteristics. Co-deposited films are described, for example, in U.S.Pat. No. 6,770,353 to Mardilovich et al. and U.S. Pat. No. 6,541,392 toAvniel et al., both incorporated herein by reference. Such referencesteach deposition of co-deposited films using multiple targets from whichmultiple materials are alternately sputtered. It is further known in theart to produce granular films with ferric grains surrounded by insulatorfrom a single composite target. See for example “Magnetic Properties andStructure of (Co-alloy)-SiO2 Granular Films” by Kaitsu et al., IEEETransactions on Magnetics, Vol. 32, No. 5, September 1996, incorporatedherein by reference. Embodiments of methods in accordance with thepresent invention can include co-depositing a metal and a dielectric bysputtering material from a single metal and dielectric composite targetin a series of process steps to a structure approximately as shown inFIGS. 1B and 4A. As can be seen in those figures, co-deposited films cancomprise a continuous non-conductive film with discontinuous conductivestructures. Such co-deposited films can substantially limit shunting,exhibiting high electrical resistance across the film (i.e., in thelateral direction) relative to electrical resistance through the film(i.e., in the vertical direction). The co-deposited film can thus besaid to be substantially “anisotropic” in conductance because theco-deposited film favors electrical conductance dependent on direction(the direction favored being through the co-deposited film rather thanacross the co-deposited film). A maximum resistance contrast can beapproached in over-layers with isotropic conductance characteristicshaving resistivity, ρ=√{square root over (ρ_(low)*ρ_(high))}.Over-layers with anisotropic conductance characteristics should haveresistivity, ρ≧√{square root over (ρ_(low)*ρ_(high))}. For example, GSThas a resistivity that varies such that 0.1 Ω-cm<√{square root over(ρ_(low)*ρ_(high))}<1Ω-cm.

The conductive portion 158 a preferably comprises an environmentallyrobust material, such as a metal having a conductive oxide. For example,the metal can comprise one or more of molybdenum (Mo), iridium (Ir), andruthenium (Ru) or some other refractory metal. The insulating portion158 b preferably comprises a dielectric that is dense and hard. Forexample, the dielectric can comprise silicon dioxide (SiO₂), siliconnitride (SiN_(x)) or aluminum oxide (Al₂O₃). Further, preferably (thoughnot necessarily) the grain size and spacing of the conductive portion158 a is sufficiently small relative to the radius of curvature of thetip 142 so that a substantial number of conductive portions 158 a are“seen” by the tip 142. For example, approximately 50 or more grains.Thus, in a preferred embodiment, where a bit (or indicium) has adiameter of 25 nm each grain should be approximately 4 nm or smaller insize given a 1:1 ratio of the width of the conductive portion 158 a andthe distance between conductive portions 158 a within the matrix ofinsulating portions 158 b. Deposition of metal oxides havingsufficiently small grain size has been described, for example, in“CoPtCr—SiO2 Granular Media for High-Density Perpendicular Recording” byUwazumi et al., IEEE Transactions on Magnetics, Vol. 39, No. 4, p. 1914,July 2003, incorporated herein by reference.

FIGS. 1B and 1C are cross-sections of a portion of the media device 150of FIG. 1A in which an indicia 160 (which can represent a data bit, andwhich for convenience is referred to herein as a data bit) has beenformed. In an embodiment a data bit 160 can be formed by passing currentthrough the recording media 156 from a tip 142 positioned in contact ornear contact with the over-layer 158, thereby heating the recordingmedia 156 near the tip 142. As described above, when the temperature ofthe phase change material exceeds a threshold temperature the phasechange material becomes semi-molten or molten, and can be quenched toform a disordered bit. In other embodiments, the bulk phase changematerial can have a disordered structure and when heated can be moreslowly cooled to form a crystalline structure. FIG. 2 is a chartillustrating the characteristics of a chalcogenide media device. Thethreshold temperature corresponds to a temperature produced in the GSTmaterial at a voltage intersecting along the iso-power line P_(t). Ascan be seen, the voltage ramped across a disordered region of achalcogenide must exceed a threshold voltage V_(t) (as defined along aniso-power line P_(t)) before the disordered region can be cooled to formcrystalline structure.

Quenching is defined as a rate of cooling that achieves a disorderedstructure, or a partially non-crystalline structure, from a molten orsemi-molten phase change material. Cooling, slow cooling, or simplecooling is defined as a rate of cooling that is slow enough that thephase change material forms a crystalline structure from a molten orsemi-molten material. In an embodiment, quenching can be achieved byremoving current from the heated portion, and allowing a conductiveunder-layer to remove heat from the heated portion, while simple coolingcan be achieved by ramping down current from the heated portion andallowing the conductive under-layer 154 to remove heat from the heatedportion. In other embodiments, quenching can be achieved by not onlyremoving current, but by diverting current from the heated portion via aclamp (described below), while simple cooling can include removingcurrent from the heated portion. An exact technique for achievingquenching can depend on the phase change material, the conductivity ofthe under-layer 154, and the temperature to which the portion is heated,as well as environmental and other factors. Further, where multipleresistivity states are used (i.e., data is stored in a non-binaryfashion), cooling and quenching can have varying cooling rates and canbe combined with heating temperature to achieve multiple differentresistivity states as desired and designed.

In a binary system, the data bit 160 has an incongruous resistancerelative to the surrounding bulk phase change material of the recordingmedia 156, the incongruity representing data stored in the media device150. To erase the data bit 160 from the media device 150, a secondcurrent is applied to a portion of the recording media 156 that includesthe data bit 160 to heat the portion and properly cool the portion toform the structure of the bulk phase change material (whether disorderedor crystalline). The resistivity of the data bit 160 is consequentlychanged to that of an unwritten state. For example, where the bulk phasechange material has a disordered structure, a crystalline bit 160 can beerased by heating a portion of the phase change material containing thecrystalline bit 160 to a second, higher temperature than was applied toform the crystalline bit 160. The portion is then quenched to ambienttemperature, thereby causing the portion to form a disordered structurehaving a resistivity similar to the original resistivity of the bulkphase change material.

For example, in an embodiment of the media device 150 in accordance withthe present invention the phase change material can comprise achalcogenide. The bulk of the phase change material can have acrystalline structure, and can correspond to an unwritten state. To setthe data bit 160 to a written state, a first current can be applied to atarget portion of the phase change material causing the portion of thephase change material to heat to a threshold temperature (which can be amelting temperature of a phase change material), which in one embodimentof a chalcogenide can be approximately 600° C. The phase change materialcan be quenched to ambient temperature, and the portion of the phasechange material heated to the threshold temperature will have aresistivity higher than the bulk, unwritten phase change material,thereby forming an indicia that can be interpreted as a data bit 160. Insuch an embodiment, quenching can be achieved by removing the firstcurrent so that the current drops substantially within a time rangingfrom 10 to 100 nanoseconds although the rate and time can varysubstantially. To reset the data bit 160 to an unwritten state (alsoreferred to herein as a reset state, and an erased state), a secondcurrent can be applied to the recording media 156 so that the portion ofthe phase change material is heated to a temperature approximately equalto a temperature ranging from 170° C. to 250° C. or greater, includingup to the threshold temperature. The temperature range can depend on thecomposition of the chalcogenide, and in some embodiments can have someother range, such as from 100° C. to 250° C., or greater. As the portionof the phase change material cools to ambient temperature, a data bit160 forms having a crystalline structure, the crystalline structurehaving a resistivity that approximates the resistivity of the bulk,unwritten phase change material. Different materials can be used for thephase change material of the recording media 156 to adjust the operatingrange for writing and erasing a data bit 160. Altering the proportionsof the elements in a chalcogenide is one way of altering the written anderased temperatures.

It should be noted that although temperatures have been described withsome level of specificity, the state of the portion to which heat isapplied is generally most influenced by a rate of cooling of theportion. A rate of cooling can be influenced by a rate at which thecurrent through the heated portion is removed from the heated portion,and how quickly the heat can be carried away from the heated portion(i.e., the conductivity of the materials of the media device 150 stack).It is largely thought that where a minimum temperature is reached (i.e.,the crystallization temperature, which in the embodiment described aboveis approximately 170° C.) and maintained, the material can be cooledslowly enough that the material can re-crystallize. Such cooling can beachieved using a number of different techniques, including ramping downa current applied to the heated portion. In some embodiments, thecurrent can be ramped down in stages, and the heated portion can bemaintained at desired temperature levels for desired times, so thatcrystallization is achieved across substantially the entire portion. Oneof ordinary skill in the art can appreciate the different applicationsof phase change material for use as a recording media 156 and thetechniques for achieving changes in material properties of the phasechange material.

In other embodiments, the phase change material can comprise achalcogenide, the bulk of which includes an disordered structurecorresponding to an unwritten state. In such embodiments, targetedportions of the phase change material can be heated and slowly cooled sothat the portion crystallizes, forming an indicia that can beinterpreted as a data bit 160 having a written state. Systems andmethods in accordance with the present invention should not beinterpreted as being limited to the conventions disclosed herein or thetemperature range or material characteristics described. Systems andmethods in accordance with the present invention are meant to apply toall such applications of phase change material 156 having indiciacorresponding to material property.

As described in the embodiment above, to erase an disordered data bit160, a second current can be applied to the portion of the phase changematerial including the data bit 160. As the portion cools, theresistivity of the portion returns to a value approximately equal to theoriginal value of the bulk phase change material, thereby erasing thedata bit 160. Multiple data bits 160 can be reset to an unwritten stateby applying heat to a large region of the media device 150. Forinstance, the media device 150 can apply a current to a buried heaterunder the media device 150. This heating can be applied to all of thememory locations in the media device 150 or a portion of the mediadevice 150 such that the resistivity of heated portion of the phasechange material is returned to an unwritten value. For example, in anembodiment strip heaters can be positioned to heat up bands within themedia device 150. In still other embodiments, a laser can be applied toat least a portion of the media device 150 to heat the portion. Forexample, where a platform on which the media device is mounted comprisesa transparent material, such as silicon dioxide, a laser can be appliedthrough the platform 108 to heat the media device 150. In still otherembodiments, a matrix of diode heaters can be formed to selectively heatportions of a media device 150. Such bulk erasing can potentiallyprovide benefits such as reduced tip wear.

In still another embodiment of a media device 150 in accordance with thepresent invention, the phase change material is capable of having aplurality of resistance states. For example, in the unwritten state, thephase change material can have a first resistance. The phase changematerial can then be heated to different temperatures and quenched,thereby changing the resistance of the phase change material. In anembodiment, a read voltage can be applied across a tip 142 and recordingmedia 156 to sense whether the resistance of the phase change materialis at or near the initial, unwritten state for the bulk phase changematerial or at some state that is sufficiently different to be measuredas a state other than the unwritten state. The phase change material canhave a first resistance characteristic at an initial, or unwrittenstate. A first current can then be applied to the recording media 156,heating the phase change material to a first temperature. The firstcurrent can be removed from the recording media 156 and the phase changematerial cools to form a structure having a second resistancecharacteristic. In an embodiment, the resistance of the phase changematerial in this second state can be measured. The second resistance canvary depending on the temperature that the phase change material isheated to by the first current, and the cooling time of the phase changematerial. A range of resistance measurements can correspond to a datavalue, with different ranges corresponding to different data values. Aplurality of resistance ranges can be employed as a plurality of datavalues using a data storage scheme other than binary, for example. In anembodiment, a data storage scheme including three data values canutilize a base-3 system rather than a binary system for storing data. Inanother data storage scheme, where four different resistance states arepossible for each data cell, each data cell can contain two bits (e.g.,each can contain 00, 01, 10 or 11). Alternatively, the precise value ofthe resistance characteristic for phase change material can be measuredfor more precise analog data storage. Measurements of the resistance arepreferentially obtained by taking measurements which are relative to afirst state of the media, but can also be obtained by taking absolutevalue measurements. Another method of measurement extracts the data asthe derivative of the measured data.

The phase change material can posses a large dynamic range forresistance states, thereby allowing analog data storage. The dynamicrange for the resistivity characteristic of the phase change materialcan be approximately 3 to 4 orders of magnitude (i.e., 1000-10,000×).For example, the resistivity of GST can range from lower than 0.1ohm-centimeters to 1000 ohm-centimeters or more. In one embodiment,however, heating from the tip 142 on the phase change material can causeonly a very small area of the phase change material to undergo a changein its resistivity. In this form a smaller dynamic range may beobserved, as only a small region of the phase change material isaltered. Media systems typically display a range of values in theinitially deposited state, such that the resistance values measured varyat different locations. Additionally, variations in the thickness of therecording media 156 and the over-layer 158 can form differences in themeasured resistance as sensed through a tip 142. These differencesmanifest as noise in a signal read from the tip 142. One method ofreducing noise uses the analog nature of the recording medium.Initially, the state of the portion of the media device 150 under thetip 142 can be detected, for example by measuring the resistivity of theportion. A voltage waveform is then applied to the tip 142 to heat andcool the recording media 156 such that the recording media 156 changesstate. The portion of the media device 150 under the tip 142 is thenread again. If the value is not within the desired noise tolerance forthe location, another voltage waveform is applied to change the value towithin the desired tolerance range. The waveform can consist of acrystalline pulse or an amorphizing pulse, or some combination of suchpulses. Multiple cycles of reading and writing can be used to drive thevalue to the desired tolerance range. In this way, the media device 150can be adaptively written to reduce noise in the subsequent read backsignal. Alternatively, the waveforms used to drive the recording media156 to a desired state can operate during the heating and coolingprocess itself by measuring the resistance state while heating andcooling.

A tip 142 formed as described below can include a distal end having aradius of curvature of about 25 nm, in one embodiment. As the tip 142moves across the surface of the media device 150, in contact or nearcontact with the surface, the tip 142 wears such that after some initialperiod the nominal radius of curvature of the distal end ranges from 50to 100 nm (or more), in one embodiment. A voltage is applied across therecording media 156 to form domains of low (or high) resistivity. Thedistal end of the tip 142 is typically not completely flat, thereforethe distal end is likely not in uniform contact or near-contact with therecording media 156 (or the over-layer 158 where present). The portionof the distal end in contact or near-contact with the surface of themedia device 150 is limited by the radius of curvature of the distalend. The portion of the tip 142 in contact or near contact is alsoreferred to herein as the terminus of the tip 142. It should be notedthat while the distal end is described as having a radius of curvature,the distal end need not be shaped so that the terminus lies along aperfect arc. The radius of curvature can be thought of as an increase inwidth of the distal end of the tip from the terminus, and as referred toherein is not meant to be limited to geometries wherein a distal endincludes a smooth, arced shape. The distal end can, for example, have aparabolic shape, a trapezoidal shape, or a non-uniform shape. The tip142 is electrically conductive, and when a voltage potential is appliedbetween the tip 142 and the media device 150, current passes from thetip 142, through the over-layer 158 and recording media 156 to theunderlying substrate 152 (in the case where the tip 142 is a voltagesource rather than a voltage sink). The current flowing between themedia device 150 and the tip 142 varies across the radius of curvatureas the electric field between the tip 142 and the media device 150decays inversely with distance from the surface of the media device 150.

The current passing from the tip 142 to the media device 150 heats thephase change material near the tip 142. The recording media 156, theover-layer 158, the recording media/over-layer interface and thetip/over-layer interface act as resistors. As the voltage potentialacross the media device 150 increases, the current increases, and thetemperature of the phase change material increases. FIG. 3 is a firstorder model of the heating characteristics of an exemplary media device150 as a voltage potential is applied across the media device 150 inaccordance with an embodiment of the present invention. The exemplarymedia device 150 includes a film stack comprising a titanium nitrideover-layer 158 deposited over a recording media 156 comprising phasechange material. The heat generated by the current can be distributed ina substantially parabolic fashion from the contact or near contact pointof the tip 142 and the surface of the media device 150. A small portionof the phase change material near the surface of the film stack (thefirst isovolume 164) is heated above 780 K, and the material surroundingthe first isovolume 164 to the second isovolume 162 ranges from 780 K to500 K. The portion of the phase change material heated above about 575K, in one embodiment, becomes molten or semi-molten. If the bulk phasechange media is disordered, the semi-molten/molten portion can be cooledslowly to form a crystalline structure having a relative resistivityorders of magnitude lower than a resistivity of the bulk phase changematerial. If the bulk phase change material has a crystalline structure,the semi-molten/molten portion can be quenched quickly, causing thesemi-molten/molten portion to become predominantly disordered and tohave a relative resistivity orders of magnitude higher than theresistivity of the bulk phase change material. The temperature achievedduring heating, and the cooling characteristics depend on thecomposition of the phase change material, and can vary greatly.

As can be seen in FIG. 3, the portion of the recording media 156 heatedto a molten state, and thereafter properly cooled to form a domainhaving a resistivity substantially different than the bulk phase changematerial can be substantially small in width relative to the radius ofcurvature of the tip 142. For example, where methods in accordance withthe present invention are applied to create a voltage potential betweenthe recording media 156 and the tip 142, it has been demonstrated that atip 142 having an approximate radius of curvature ranging from 50 nm to100 nm can produce a domain having a width of approximately 15 nm. Thedomain can be said to be “super resolved.” Such super resolution canresult in part from properties of the over-layer, which can be amaterial having anisotropic electrical conductivity (as described above)that conducts current better through the film rather than across thefilm. This property can focus electron flow near the center of the tip142. Further, a portion of the phase change material near the center ofthe tip 142 is heated first, the portion consequently exhibiting lowerresistance than the surrounding media, even the unheated crystallinematerial. Electron flow follows the lowest resistance, and thus theelectron flow is further focused.

The amount of focusing of the current through the recording media 156(and thus the size of the domain that results) can vary with the voltagepotential across the recording media 156 and the pressure between thetip 142 and the surface of the media device 150. The voltage potentialcan determine the size of an air gap across which the current can arc,and current may or may not flow between the tip 142 and the recordingmedia 156 where an air gap exists (i.e. where the tip is not in directcontact with the media due to curvature). The pressure applied by thetip 142 against the surface can likewise affect the portion of the tip142 in direct contact with the surface and a size of the air gap wherethe tip curves away from the surface.

Once a domain has been defined within the recording media 156, theresistivity of the domain can be measured by applying a smaller voltagepotential across the portion of the media device 150 including thedomain (e.g., in one embodiment less than 1 volt) and measuring thecurrent through the portion. The small voltage potential drives a smallcurrent, insufficient to heat the portion to a crystallization orthreshold temperature. Thus, the resistance (and resistivity) of theportion including the domain can be measured without substantiallyheating the phase change material and causing the electricalcharacteristics of the phase change material to be altered.

A media device 150 can optionally include a lubricant 151 (see FIG. 1A)that is formed, deposited, adhered, or otherwise placed, positioned orapplied over the over-layer 158. In some embodiments, the lubricant 151can be a liquid, while in other embodiments, the lubricant 151 can be anon-liquid, such as molybdenum disulfide. In still other embodiments,the lubricant 151 can be a form of carbon. The lubricant 151 can beapplied to an over-layer 158 using myriad different techniques. In anembodiment, the lubricant 151 can be deposited on the over-layer 158using a deposition process. In another embodiment, the lubricant 151 canbe sprayed onto the over-layer 158.

Referring to FIGS. 4A and 4B, in a preferred embodiment the lubricant151 is a monolayer comprising a plurality of polymer chains, the polymerchains being adapted to bond to the recording media 156, the over-layer158 or alternatively some adhesion layer. Monolayers decrease wear andextend the operational lifetime of the tip and/or the media stack andimprove parameters of the tip-media interface. In such embodiments, itcan be preferable to dispose a lubricant adhesion layer 259, such asamorphous carbon, nitrogenated amorphous carbon, hydrogenated amorphouscarbon, and DLC, over the recording media 156 or over the over-layer158. Polymer chains can preferentially bond to the lubricant adhesionlayer 259 to resist adhesion of the polymer chains to the contact (i.e.,the tip 142) or to resist becoming displaced as a result of one or bothof friction and stiction with the contact. As shown in FIG. 4B, thelubricant adhesion layer 259 can be disposed over a selectivelyconductive over-layer 158 so that shunting can be limited whileproviding a surface to which the polymer chains can preferentially bond.The polymer chains are further bonded at a proximal end 190, 290 of thepolymer chain and appear as hairs or cilia on the surface of the mediadevice 150, 250. The lubricant 151 and lubricant adhesion layer 259preferably are sufficiently conductive so that current flow is notinhibited and heat is not excessively generated at thetip/lubricant/adhesion layer/over-layer interfaces. Alternatively, thelubricant 151 and lubricant adhesion layer 259 may be substantiallynon-conductive such that the current must tunnel through the lubricant151 and lubricant adhesion layer 259.

In alternative embodiments, the lubricant 151 includes more than onelayer of a plurality of polymer chains, the polymer chains from onelayer being adapted to bond to the polymer chairs of another layer. Suchlubricants 151 can have a layer that “floats” or moves over anotherlubricant layer disposed between the media surface and the “mobile”layer. The mobile layer can selectively bond to the adhesion layer 259(or alternatively the recording media 156 or over-layer 158 where theadhesion layer 259 is not present) to heal defects in the surface causedby relative motion of a tip and the media.

In still further embodiments, it may be desired that the lubricant 151be a monolayer having both bound and mobile phases. For example, FomblinZ-DOL with additives is a lubricant system with bound and mobile phasesthat has traditionally been used as a lubricant on the surface ofmagnetizable disks of a hard disk drive (HDD). The lubricant limitsdamage caused when a read/write (RJW) head collides with a surface of adisk. Such lubricants are capable of providing self-healing surfacesthat are effective at elevated temperatures. It has been demonstratedthat monolayers having both bound and mobile phases resist wear betterthan bound monolayers. However, as discussed in “Thermal Stability ofFomblin Z and Fomblin Zdol Thin Films on Amorphous Hydrogenated Carbon”by Lei et al., Tribology Letters, Vol. 11, No. 1, 2001, incorporatedherein by reference, desorption peaks of the mobile “non-bonded”lubricant occur at a lower temperature (e.g., 645K) than desorptionpeaks of the bound lubricant, which may or may not be undesirable wherethe phase change material must be heated above 600° C. to induce phasechange. One of skill in the art will appreciate the myriad differentlubricants that can be employed to provide a desired relationshipbetween a tip and a media device 150, and the myriad differenttechniques for applying such lubricant 151.

Media Comprising Polarity-Dependent Memory Layer

In other embodiments of a media device 350 for use with systems andmethods in accordance with the present invention can include a recordingmedia comprising a polarity-dependent memory layer 380. FIGS. 5A through5C illustrate a media device 350 including a substrate 152, an optionalinsulating layer 186 disposed over the substrate 152, an under-layer(referred to as a bottom electrode when referencing embodimentsincluding a polarity-dependent memory layer) 154 disposed over theinsulating layer 186 (where present), a polarity-dependent memory layer380 disposed over the bottom electrode 154, and an over-layer (referredto as a top electrode when referencing embodiments including apolarity-dependent memory layer) 158 disposed over thepolarity-dependent memory layer 380.

As above, the substrate 152 can comprise silicon (Si), gallium arsenide(GaAs), or some other semiconductor material. In some applications, itcan be desirable to ensure electrical and thermal isolation of thebottom electrode 154 and recording media from the substrate 152. Toprovide additional isolation, an insulating layer 186 can be disposedbetween the bottom electrode 154 and the substrate 152. The insulatinglayer 186 can be an oxide, such as silicon dioxide (SiO2), or some othermaterial having thermal and electrical insulating properties. The bottomelectrode 154 can comprise an electrically conductive metal, or someother material having similar electrical properties. In an embodiment,the bottom electrode 154 can comprise one or more of tungsten, platinum,gold, aluminum, and copper. It may be desired that the material chosenfor forming the bottom electrode 154 further be chosen based onadditional properties, such as adhesion characteristics, and uniformityof deposition, etc. One of skill in the art can appreciate the myriaddifferent materials having good electrical conductivity and one or morefavorable properties for forming the bottom electrode 154. The bottomelectrode 154 should provide for good electrical conduction through thepolarity-dependent memory layer 380, though it need not draw away heatas efficiently as in embodiments having a recording media comprising aphase change material. Much lower currents can be applied to the mediadevice 350 where the polarity-dependent memory layer 380 is used, andthe material is heated to a much lower temperature.

The top electrode 158 is disposed over the polarity-dependent memorylayer 380. The top electrode 158 should provide an ion barrier toprevent unintentional migration of ions from the polarity-dependentmemory layer 380 into the top electrode 158. As above, the top electrode158 can be continuous or discontinuous. Where the top electrode 158 iscontinuous, the top electrode 158 preferably comprises a material thatprovides anisotropic resistivity characteristics and that iselectrochemically inert when a voltage is applied across the mediadevice 150. For example, as above, the top electrode 158 can include aco-deposited film comprising a conductive material such as a conductivemetal oxide, and an insulating material, such as silicon dioxide.Electrical current is passed through the media device 150 from a tip 142in contact with the top electrode 158, or in contact with a conductivelayer disposed over the top electrode 158 (such as a lubricant 151).

The polarity-dependent memory layer 380 includes an ion source layer 384and a solid electrolyte layer 382. Such polarity-dependent memory layersare described, for example, in “Non-Volatile Memory Based SolidElectrolytes” by Kozicki et. al, Proceedings of the 2004 Non-VolatileMemory Technology Symposium, 10-17 (2004), incorporated herein byreference. In a preferred embodiment, the ion source layer 384 comprisessilver (Ag), however in other embodiments, the ion source layer 384 cancomprise some other metal having mobile ions, such as copper (Cu). Thesolid electrolyte layer 382 is disposed over the ion source layer 384and in the preferred embodiment comprises silver germanium sulfide(AgGeS) or silver germanium selenide (AgGeSe); however, in otherembodiments, the solid electrolyte layer 382 can comprise some othermetal chalcogenide exhibiting similar properties of metal ion mobilitywithin a generally non-conductive matrix. Alternatively, the solidelectrolyte layer 382 can comprise an oxide-based electrolyte such assilver tungsten oxide (AgWO₃) or copper tungsten oxide (CuWO₃). Suchmaterials may or may not exhibit equally satisfactory results comparableto metal chalcogenides. In the preferred embodiment, the solidelectrolyte layer 382 can be formed after deposition of the ion sourcelayer 384 by depositing a chalcogenide layer such as GeS or GeSe overthe ion source layer 384, and applying ultraviolet (UV) light to thematerial to diffuse Ag ions into the chalcogenide layer. Alternatively,Ag ions can be prompted to diffuse into the chalcogenide layer byannealing. Alternatively, the solid electrolyte layer 382 can comprise aco-deposited film sputtered from separate Ag and GeS or GeSe targets orthe solid electrolyte layer 382 can be a co-deposited film sputteredfrom a single AgGeS or AgGeSe alloy target.

The solid electrolyte layer 382 can be useful in that positively chargedmetal ions 383 contained within the solid electrolyte layer 382 can beplentiful and highly mobile. Conversely, negatively charged counter-ionsare fixed in the solid. Referring to FIG. 5B, the bottom electrode 154acts as an anode (i.e., the positive electrode in an electrolyticcircuit), and a positive voltage can be applied to the bottom electrode154, or alternatively the bottom electrode 154 can be grounded. The topelectrode 158 acts as a cathode (i.e., the negative electrode in theelectrolytic circuit) and a negative voltage can be applied to the topelectrode 158. An applied voltage as low as a few hundred mV will reduceions to form metal atoms at the cathode (i.e., the top electrode 158)and put ions into the solid electrolyte layer 382 via oxidation at theion source layer 384 arranged in electrical contact with the anode(i.e., the bottom electrode 154). Charge neutrality is maintained bybalancing the oxidation and reduction via the ion source layer 384,preventing a charge build-up that would otherwise halt theelectro-deposition process. The solid electrode layer 382 can be made tocontain ions throughout the film. The ions near the top electrode 158will move toward the top electrode 158 and be reduced first. Nucleationoccurs at the top electrode 158 and the ions continue to be reduced fromthe nucleation site, where growth is favored as the source of thehighest electrical field. A vein of reduced ions will extend out fromthe top electrode 158 toward the bottom electrode 384 forming a metallicfilament 385 having a dendritic structure. In this way, theelectro-deposition process effectively extends the top electrode 158into the solid electrolyte layer 382. The resistivity of the filament385 is many orders of magnitude lower than the bulk solid electrolytelayer 382, and once the filament 385 has grown from the top electrode158 to the conductive ion source layer 384, the resistance of the mediadevice 350 through the filament 385 drops significantly.

Referring to FIG. 5C, the electro-deposition process can be reversed,and the filament 385 “disassembled” by changing the polarity of theapplied voltage bias, applying a positive voltage to the tip 142 andconsequently the top electrode 158 and the filament 385. The filament385 becomes the anode, dissolving by oxidation. The dissolved ions arereturned to original source structures (i.e., the solid electrolytelayer 382 and the ion source layer 384). Disassembly of the filament 385breaks a conductive link between the top electrode 158 and the bottomelectrode 154, causing the resistance of the media device 350 throughthe portion formerly containing the filament 385 to increasesignificantly.

Use of a top electrode 158 having anisotropic electrical conductivity(e.g., a co-deposited film) and application of a small voltage potentialacross the recording media 380 (relative to a voltage potential appliedto heat the phase change media 156) can allow for dense arrangement offilaments 385 in the recording media 380 by minifying the width of thefilament 385 and the dendritic nature of the filament's structure. Thesmall voltage potential can also reduce the amount of power consumed inthe writing and reading process, simplifying the design of packaging,reducing the amount of battery power consumed by the writing and readingprocess in a portable device including such a media device 350, andpotentially improving the operational life of the media device 350 byreducing thermal stresses.

As above, the media device 350 can optionally include a lubricant 151that is formed, deposited, adhered, or otherwise placed, positioned orapplied over the top electrode 158. In some embodiments, the lubricant151 can be a liquid, while in other embodiments, the lubricant 151 canbe a non-liquid, such as molybdenum disulfide. In still otherembodiments, the lubricant 151 can be a form of carbon. The lubricant151 can be applied to the top electrode 158 using myriad differenttechniques. In an embodiment, the lubricant can be deposited on the topelectrode 158 using a deposition process. In another embodiment, thelubricant can be sprayed onto the top electrode 158. In a preferredembodiment the lubricant is a monolayer comprising a plurality ofpolymer chains, the polymer chains being adapted to bond to the topelectrode 158. It can further be preferable to dispose a lubricantadhesion layer such as amorphous carbon, nitrogenated amorphous carbon,hydrogenated amorphous carbon, and DLC over the top electrode 158. Thelubricant adhesion layer can be disposed over a selectively conductivetop electrode 158 so that shunting can be limited while providing asurface to which the polymer chains can preferentially bond. In stillfurther embodiments, it may be desired that the lubricant be a monolayerhaving both bound and mobile phase. One of skill in the art willappreciate the myriad different lubricants that can be employed toprovide a desired relationship between a tip and a media device 350, andthe myriad different techniques for applying such lubricant.

In other embodiments, the recording media can be a media other than aphase change material or a polarity-dependent memory layer. For example,the media device can be a charge storage-type media. Charge storagemedia stores data as trapped charges in dielectrics. Thus, for chargestorage media, the media would be a dielectric material that trapscharges when in a written state. Changing media back to an unwrittenstate simply requires the removal of the trapped charges. For instance,a positive current can be used to store charges in media. A negativecurrent can then be used to remove the stored charges from media.

Patterned Media

FIGS. 6A, 6J and 7A are cross-sections of patterned media devices foruse with still further embodiments of systems and methods in accordancewith the present invention. The media devices 450/550/650 include asubstrate 152, an under-layer 154 disposed over the substrate 152, anoptional insulating layer 186 disposed between the substrate 152 and theunder-layer 154, a continuous or discontinuous layer of recording media156/456/656 formed over the under-layer 154, a discontinuous over-layer458/558/658 formed over the recording media 156/456/656, a lubricant 151disposed over the surface of the media device 450/550/650, andoptionally a lubricant adhesion layer 259 disposed between the lubricant151 and the surface of the media device 450/550/650. As above, thesubstrate 152 can comprise silicon (Si), gallium arsenide (GaAs), orsome other semiconductor material. The insulating layer 186 canoptionally be included where it is desired that the under-layer 154 beinsulated from the substrate 152. The insulating layer 186 can compriseone of an oxide and a nitride material, thereby insulating the media156/456/656 from the substrate 152. The under-layer 154 can comprise ahighly conductive material that draws heat away from the recording media156/456/656 to facilitate fast cooling of the recording media156/456/656. In an embodiment, the under-layer 154 can comprisetungsten, while in other embodiments the under-layer 154 can compriseone or more of platinum, gold, aluminum, and copper. In still otherembodiments, the under-layer 154 can comprise some other material havinghigh conductivity. It may be desired that the material forming theunder-layer 154 further be chosen based on additional properties, suchas thermal expansion characteristics, adhesion characteristics, anduniformity of deposition, etc. One of ordinary skill in the art canappreciate the myriad different materials having high conductivity andone or more favorable properties for forming the under-layer 154.

As can be seen in FIG. 6A, in an embodiment the media device 450includes a plurality of cells 487 disposed within an inhibiting matrix488. The inhibiting matrix 488 can comprise a material that inhibits theflow of current, such as a substantially electrically non-conductivematerial, or an electrically insulating material, or more specifically adielectric. It can also be desired that the inhibiting matrix 488inhibit thermal expansion, and therefore comprise a material that isthermally insulating. The plurality of cells 487 comprise a recordingmedia 456 portion and an over-layer 458 portion. Thus it can be saidthat the recording media 456 is a discontinuous layer. As in theembodiment of FIG. 1A-1C, the recording media 456 can comprise a phasechange material such as GST. As the recording media 456 is heated beyondsome threshold temperature by driving current from a contact (i.e., atip 142) through the recording media 456 and then quenched, thestructure of some or all of the phase change material in the recordingmedia 456 changes from a crystalline state to a disordered state.Conversely, if the phase change material is heated above some thresholdand then allowed to cool slowly, the material will tend tore-crystallize. As a result of the change in structure of the phasechange material, the resistivity of the recording media 456 changes.This resistivity change is quite large in phase change materials and canbe easily detected by a tip 142 that is conductive or that includes aconductive coating by passing current through the tip 142 and the mediadevice 450.

Further, it can be said that the over-layer 458 is a discontinuouslayer. As above, the over-layer 458 can comprise a material selected toprevent physical damage to the recording media 456 and/or to the tipwhen the tip 142 contacts the over-layer 458. The over-layer 458 cancomprise a material that is resistant to wear, thereby extending thelifetime of the over-layer 458 and/or the tip 142. It can be preferablethat the over-layer 458 material exhibit wear characteristics similar towear characteristics of the inhibiting matrix 488 so that undesirednon-planarity does not develop through use of the media device 450. In apreferred embodiment, the over-layer 458 comprises a material having ahigh conductance, such as a conductive metal. The separation of theover-layer 458 by the inhibiting matrix 488 resists shunting of currentapplied to the over-layer 458, therefore the over-layer 458 need nothave low lateral conductivity. However, where desired the over-layer 458can comprise a material having a low conductance characteristic, and ahigh hardness characteristic. Alternatively, the over-layer 458 cancomprise an anisotropic columnar material that conducts current morereadily through a film than across a film, such as a co-deposited filmas described above, or some metal nitride such as TiN or MoN havingsimilar properties. Titanium nitride (TiN) is a hard material thatconducts poorly.

In still other embodiments, the over-layer 458 can comprise aninsulator. Where an insulator is used as an over-layer 458, currentapplied to the media device 450 from the tip 142 must tunnel through theover-layer 458 before reaching the recording media 456. Thus, in anembodiment, the over-layer 458 should be thin (relative to the recordingmedia 456) so that the amount of tunneling required before a current caninteract with the recording media 456 is minified. Again, use of ananisotropic columnar material, or an insulator in the over-layer 458 canbe unnecessary because of the isolation of the over-layer 458.

As can be seen in FIG. 7A, in an alternative embodiment the plurality ofcells 587 comprise the over-layer 458. In such embodiments, theplurality of cells 587 disposed within the inhibiting matrix 588 aredisposed over a continuous recording media 156. As above, the over-layer458 can comprise a material selected to prevent physical damage to therecording media 156 and/or to the tip 142 when the tip 142 contacts theover-layer 458.

As shown in FIGS. 6A and 7A, the media device 450/550 can optionallyinclude a lubricant 151 comprising a continuous film over the surface ofthe media device 450/550. The lubricant 151 can be formed, deposited,adhered, or otherwise placed, positioned or applied over the surface ofthe media device 550. In some embodiments, the lubricant 151 can be aliquid, while in other embodiments, the lubricant 151 can be anon-liquid, such as molybdenum disulfide. In still other embodiments,the lubricant 151 can be a form of carbon. The lubricant 151 can beapplied to the surface of the media device 450/550 using myriaddifferent techniques. In an embodiment, the lubricant 151 can bedeposited on the surface of the media 450/550 using a depositionprocess. In another embodiment, the lubricant 151 can be sprayed ontosurface of the media 450/550.

In a preferred embodiment a lubricant adhesion layer 259, for exampleamorphous carbon, nitrogenated amorphous carbon, hydrogenated amorphouscarbon, and DLC, is disposed between the lubricant 151 and the surfaceof the media device 450/550. The lubricant 151 is a monolayer comprisinga plurality of polymer chains, the polymer chains being adapted to bondto the lubricant adhesion layer 259. Polymer chains can preferentiallybond to the lubricant adhesion layer 259 to resist adhesion of thepolymer chains to a contact (i.e., the tip 142) or to resist becomingdisplaced as a result of one or both of friction and stiction. Thelubricant adhesion layer 259 provides a uniform surface to which thelubricant 151 can bond.

In still further embodiments, it may be desired that the lubricant 151be a monolayer having both bound and mobile phase, for example FomblinZ-DOL with additives. As described above, such lubricants are capable ofproviding self-healing surfaces that are effective at elevatedtemperatures. One of skill in the art will appreciate the myriaddifferent lubricants that can be employed to provide a desiredrelationship between a tip 142 and the media device 450/550, and themyriad different techniques for applying such lubricant 151.

The media device 450/550 can be formed using traditional semiconductormanufacturing processes for depositing or growing layers of film insequence using deposition chambers (e.g., chemical vapor deposition(CVD) chambers, plasma vapor deposition (PVD) chambers) and/or furnaces,for instance. For example, referring to the media device 450 of FIG. 6A,the insulating layer 186, the under-layer 154 are formed over thesubstrate 152. One of an insulating material (FIG. 6B) and both therecording media and the over-layer (FIG. 6F) is formed over the stack.Referring to FIG. 6C, where the insulating material is formed over thestack, the insulated material is patterned and etched to form aninhibiting matrix 488 having vias. The vias are then subsequently filledby successive forming of the recording media material and theover-layer, resulting in the plurality of cells 487 (FIGS. 6C and 6D).Alternatively as shown in FIG. 6G, where both the recording media andthe over-layer are formed over the stack, the recording media andover-layer are patterned and etched to form cells 487. The underlayer154 not disposed beneath the cells 487 is exposed. A material havinginsulating properties is deposited or otherwise formed over the exposedunderlayer 154, resulting in the inhibiting matrix 488 (FIG. 6H). Thesurface of the media device 450/550 can be substantially planarized bychemical-mechanical polishing (CMP), for example after deposition steps(FIGS. 6C, 6D, and 6H). Referring to FIG. 6D, the CMP step removesexcess over-layer material 458 on top of the insulating matrix 488. Inthe alternative process illustrated in FIGS. 6F-6H the CMP step is usedto remove excess insulating material 488 on top of the over-layer 458(as shown in FIG. 6H). The lubricant adhesion layer 259 and thelubricant 151 are then formed over the planarized surface of the mediadevice 450.

Alternatively, the media device 450 can be planarized by dry etching orion milling rather than CMP.

Referring to FIG. 6I, ion milling can be effectively performed to removerecording media material 456 from the top of the insulating matrix 488.This process has some benefits, for example where GST is the recordingmedia, because of the relatively high selectivity of ion millingprocesses to oxide/nitride when removing GST. For example, where theaspect ratio of the width to the height of each cell is 1 to 1, themedia device 450 can be arranged at an angle of 45 degrees or largerrelative to the angle of incidence of the ions that strike the mediadevice 450 during processing. The sidewalls of the cells 487 will maskthe GST within the cells 487 from ion bombardment, preventing etching ofGST within the cell 487 while removing GST deposited over the inhibitingmatrix 488. Ion milling can replace the CMP step following deposition ofGST in a via, as shown in FIG. 6I and occurring between stepsillustrated in FIGS. 6C and 6D. When the aspect ratio of the width tothe height of each cell differs from 1:1, then the angle between thenormal to the surface of the media device 450 and the direction of ionmilling beam 690 can be adjusted accordingly to provide protection ofthe GST deposited in the cavities.

Referring to the media device 550 of FIG. 7A, the insulating layer 186,the under-layer 154, and the recording media 156 are formed over thesubstrate 152 as continuous layers. Referring to FIGS. 7B and 7C, wherean insulating material is then formed over the stack (FIG. 7B), theinsulated material is patterned and etched to form an inhibiting matrix588 having vias. The vias are then subsequently filled by forming theover-layer 558 within the vias, creating the plurality of cells 587.Alternatively, where the over-layer 558 is formed over the stack (FIG.7D), the over-layer 558 is patterned and etched to form cells 587. Therecording media 156 not disposed beneath the remaining over-layer 558 isexposed. Referring to FIG. 7E, a material having insulating propertiesis deposited or otherwise formed over the exposed recording media 156 toform the inhibiting matrix 588. The surface of media can besubstantially planarized by CMP. The lubricant adhesion layer 259 andthe lubricant 151 are then formed over the planarized surface of themedia device 550.

As shown in FIGS. 6A and 7A, the interface between the inhibiting matrix488/588 and the cells 487/587 is a sidewall having substantiallyvertical walls. Such substantially vertical walls are formed by ananisotropic etch process, such as by reactive ion etching (RIE). One ofskill in the art can appreciate the myriad different techniques forforming a media device 450/550 having approximately vertical sidewalls.However, referring to FIG. 6J it can be desirable to form sidewallshaving a slope less than vertical (i.e., approximately 90 degrees) sothat the cells 687 taper at the under-layer 154. In a preferredembodiment, the width of the cell 687 is 30 nm on the top (i.e., nearestthe cell/tip interface, cell/lubricant, or cell/over-layer interface)and the stack thickness of the cell 687 is 50 nm, while the pitchbetween the cells 687 is roughly 50 nm. A minimum sidewall angle can bedefined as an angle formed such that the recording media 656 and theunder-layer 154 have sufficient electrical contact. For example, in anembodiment, the cells 687 can taper at most 16 degrees. Formingsidewalls with tapers in semiconductor structures is known in othertechnologies to be achievable by a number of different techniques,including nano-imprinting lithography (NIL), reducing photoresistthickness and reducing selectivity to the insulating material.

The current through the cell 687 is focused by the shape of the cell687. Such current focusing can increase signal contrast, increasing therobustness of multi-bit recording, for example. Further, because thecell 687 tapers near the interface of the recording media 656 and theunder-layer 154, the dielectric is thicker between the portion of thecells including the recording media 656 relative to the portion of thecells including over-layer 658. A higher ratio of cross-sectional areaof insulating material to cross-sectional area of recording media 656can mean potentially lower thermal interference.

Defining patterns in the media device 450/550/650 requires a techniquefor delineating features less than 0.1 um in dimension. In preferredembodiments, a class of process techniques known as nano-imprintinglithography (NIL) can be applied to define required patterns for themedia device 450/550/650. Nano-scale alignment may not be required instructures and fabrication methods where NIL process techniques areemployed. NIL process techniques can include thermal NIL, UV-NIL, orstep-flash imprinting lithography (SFIL). Such process techniques arecapable of resolving features having dimensions smaller than 10 nm, withreasonable throughput at reasonable cost. A mold for applying suchtechniques can be fabricated, for example, with electron beam (“e-beam”)lithography or ion-beam lithography. In other embodiments, patterns canbe transferred to the media device 450/550/650 using some other processtechnique or class of process techniques, including optical lithographytechniques. Such techniques include extreme ultraviolet lithography(EUVL), X-ray lithography, e-beam lithography, and ion beam lithography.Where multi-bit recording is used, the density of the pattern is lessrelevant, and the pattern transfer technique applied can be chosen basedon some factor other than feature width, such as uniformity and yield.One of skill in the art will appreciate the limitations and benefits ofapplying the different techniques for transferring patterns to the mediadevice 450/550/650 and can appreciate the variations that can be appliedto such techniques. Such variations are contemplated as being within thescope of the present invention.

FIGS. 8A-8C are cross-sections of patterned media devices for use withstill further embodiments of systems and methods in accordance with thepresent invention. The media devices 750/850 include a substrate 152, anoptional insulating layer 186 disposed over the substrate 152, acontinuous under-layer 154 (i.e., bottom electrode) disposed over thesubstrate 152 and the insulating layer 186 (where present), adiscontinuous layer of recording media 780/880 formed over theunder-layer 154, a discontinuous over-layer 758/858 (i.e., topelectrode) formed over the recording media 780/880, a lubricant 151disposed over the surface of the media device 750/850, and optionally alubricant adhesion layer 259 disposed between the lubricant 151 and thesurface of the media device 750/850. As above, the substrate 152 cancomprise silicon (Si), gallium arsenide (GaAs), or some othersemiconductor material. The insulating layer 186 can optionally beincluded where it is desired that the bottom electrode 154 be insulatedfrom the substrate 152. The insulating layer 186 can comprise one of anoxide and a nitride material, or some other material having thermal andelectrical insulating properties, thereby insulating the recording media780/880 from the substrate 152.

Referring to FIG. 8A, in an embodiment the media device 750 includes aplurality of cells 787 disposed within an inhibiting matrix 788 theplurality of cells 887 comprise the polarity-dependent memory layer 780and the top electrode 758. In such embodiments, the plurality of cells887 and the inhibiting matrix 888 are disposed over a continuous bottomelectrode 154. In an embodiment, the bottom electrode 154 can compriseone or more of tungsten, platinum, gold, aluminum, and copper. It may bedesired that the material chosen for forming the bottom electrode 154further be chosen based on additional properties, such as adhesioncharacteristics and uniformity of deposition, etc. One of ordinary skillin the art can appreciate the myriad different materials having goodelectrical conductivity and one or more favorable properties for formingthe bottom electrode 154. The bottom electrode 154 should provide forgood electrical conduction through the polarity-dependent memory layer780, though it need not draw away heat as efficiently as in embodimentswhere the recording media comprises a phase change material. Much lowercurrents can be applied to the media device 750 where thepolarity-dependent memory layer 780 is used as the recording media, andthe material is heated (incidentally) to a much lower temperature. Thepolarity-dependent memory layer 780 is a discontinuous layer thatincludes an ion source layer 784 and a solid electrolyte layer 782. Theion source layer 784 and the solid electrolyte layer 782 can comprisematerials as described above with reference to FIGS. 5A-5C. As above,the bottom electrode 154 acts as an anode (i.e., the positive electrodein an electrolytic circuit), and a positive voltage can be applied tothe bottom electrode 154, or alternatively the bottom electrode 154 canbe grounded. As shown in FIG. 8A, the solid electrolyte layer 782 isdisposed over the ion source layer 784. However, in other embodiments,the ion source layer 784 can be disposed over the solid electrolytelayer 782. For convenience, only the embodiment of FIG. 8A (and 8Dbelow) will be discussed, though one of ordinary skill in the art willappreciate alternative arrangements of the polarity-dependent memorylayer 780/880.

The top electrode 758 is a discontinuous layer disposed over thepolarity-dependent memory layer 780. The top electrode 758 shouldprovide an ion barrier to prevent unintentional migration of ions fromthe polarity-dependent memory layer 780 into the top electrode 758. Asabove, the top electrode 758 can comprise a material selected to preventphysical damage to the recording media 780 and/or to the tip when thetip 142 contacts the top electrode 758. The top electrode 758 cancomprise a material that is resistant to wear, thereby extending thelifetime of the top electrode 758 and/or the tip 142. In a preferredembodiment, the top electrode 758 comprises a material having a highconductance, such as, for example, a refractory metal (e.g., molybdenum,indium, platinum, iridium and iridium oxide, etc.). However, the classof materials need not necessarily be defined by the maximum temperatureof the media device because an indicia in a polarity-dependent memorylayer is not exclusively, or typically, a result of a temperaturedependent process. The separation of the cells 787 by the inhibitingmatrix 788 resists shunting of current applied to the top electrode 758,therefore the top electrode 758 need not comprise a material having lowlateral conductivity. However, where desired the top electrode 758 cancomprise a material having a low conductance characteristic, and a highhardness characteristic. Alternatively, the top electrode 758 cancomprise an anisotropic columnar material that conducts current morereadily through a film than across a film, such as a co-deposited filmas described above, or some metal nitride such as TiN or MoN havingsimilar properties. Titanium nitride (TiN) is a hard material thatconducts poorly.

As above, the media device 750 can optionally include a lubricant 151comprising a continuous film over the surface of the media device 750.The lubricant 151 can be formed, deposited, adhered, or otherwiseplaced, positioned or applied over the surface of the media device 750.In some embodiments, the lubricant 151 can be a liquid, while in otherembodiments, the lubricant 151 can be a non-liquid, such as molybdenumdisulfide. In still other embodiments, the lubricant 151 can be a formof carbon. The lubricant 151 can be applied to the surface of the mediadevice 750 using myriad different techniques. In an embodiment, thelubricant 151 can be deposited on the surface of the media device 750using a deposition process. In another embodiment, the lubricant 151 canbe sprayed onto surface of the media device 750.

In a preferred embodiment a lubricant adhesion layer 259, for exampleamorphous carbon, nitrogenated amorphous carbon, hydrogenated amorphouscarbon, and DLC, is disposed between the lubricant 151 and the surfaceof the media device 750. The lubricant 151 is a monolayer comprising aplurality of polymer chains, the polymer chains being adapted to bond tothe lubricant adhesion layer 259. Polymer chains can preferentially bondto the lubricant adhesion layer 259 to resist adhesion of the polymerchains to a contact (i.e., the tip 142) or to resist becoming displacedas a result of one or both of friction and stiction. The lubricantadhesion layer 259 provides a uniform surface to which the lubricant 151can bond.

In still further embodiments, it may be desired that the lubricant 151be a monolayer having both bound and mobile phase, for example FomblinZ-DOL with additives. As described above, such lubricants are capable ofproviding self-healing surfaces that are effective at elevatedtemperatures. One of skill in the art will appreciate the myriaddifferent lubricants that can be employed to provide a desiredrelationship between a tip 142 and the media device 750/850, and themyriad different techniques for applying such lubricant 151.

The media device 750 can be formed using traditional semiconductormanufacturing processes for depositing or growing layers of film insequence using deposition chambers (e.g., chemical vapor deposition(CVD) chambers, plasma vapor deposition (PVD) chambers) and/or furnaces,for instance, and etching patterns within selected layers of film toform discontinuous layers. For example, referring to the media device750 of FIG. 8A, the insulating layer 186 and the bottom electrode 154are formed over the substrate 152 as continuous layers. One of aninsulating material and both the polarity-dependent memory layer 780 andthe top electrode 758 is formed over the bottom electrode 154. Referringto FIGS. 8B and 8C, in a preferred embodiment the polarity-dependentmemory layer 780 and the top electrode 758 are formed over the bottomelectrode 154. The polarity-dependent memory layer 780 and the topelectrode 758 are patterned and etched to form cells 787. The underlayer154 not disposed beneath the cells 787 is exposed. A material havinginsulating properties is deposited or otherwise formed over the exposedunderlayer 154, resulting in the inhibiting matrix 788. Alternatively,where the insulating material is formed over the bottom electrode 154,the insulated material is patterned and etched to form an inhibitingmatrix 788 having vias. The vias are then subsequently filled bysuccessive forming of the polarity-dependent memory layer 780 (whichrequires multiple processing steps as discussed above) and the topelectrode 758 to form the plurality of cells 787. The surface of themedia device 750 can be substantially planarized by CMP. The lubricantadhesion layer 259 and the lubricant 151 are then formed over theplanarized surface of the media device 750.

As shown in FIG. 8A, the interface between the inhibiting matrix 788 andthe cells 787 is a sidewall having a substantially vertical arrangementrelative to the planar surface of the media device 750. Suchsubstantially vertical walls are formed by an anisotropic etch processsuch as by reactive ion etching (RIE). One of ordinary skill in the artcan appreciate the myriad different techniques for forming a mediadevice 750 having approximately vertical sidewalls. However, referringto FIG. 8D it can be desirable form sidewalls having a slope less thanvertical (i.e., 90 degrees) so that the cells 887 taper at the bottomelectrode 154. In a preferred embodiment, the width of the cell 887 is30 nm on the top (i.e., nearest the celutip interface, cell/lubricant,or cell/over-layer interface) and the stack thickness of the cell 887 is50 nm, while the pitch between the cells 887 is roughly 50 nm. A minimumsidewall angle can be defined as an angle formed such that the recordingmedia 856 and the under-layer 154 have sufficient electrical contact.For example, in an embodiment, the cells 887 can taper at most 16degrees. Forming sidewalls with tapers in semiconductor structures isknown in other technologies to be achievable by a number of differenttechniques, including NIL, reducing photoresist thickness and reducingselectivity to the insulating material.

The current through the cell 887 is focused by the shape of the cell887. Such current focusing can increase signal contrast, increasing therobustness of multi-bit recording, for example. Further, because thecell 887 tapers near the interface of the recording media 856 and theunder-layer 154, the dielectric is thicker between the portion of thecells including the recording media 856 relative to the portion of thecells including over-layer 858. A higher ratio of cross-sectional areaof insulating material to cross-sectional area of recording media 856can mean potentially lower thermal interference.

As above, patterns can be defined in the media device 750/850, inpreferred embodiments, by applying nano-imprinting lithography NIL). Inother embodiments, patterns can be transferred to the media device750/850 using some other process technique or class of processtechniques, including optical lithography techniques such as extremeultra-violet lithography (EUVL), X-ray lithography, e-beam lithography,and ion beam lithography. Though, as mentioned above, nano-scalealignment may not be required in structures and fabrication methodswhere NIL process techniques are employed. Where multi-bit recording isused, the density of the pattern is less relevant, and the patterntransfer technique applied can be chosen based on some factor other thanfeature width, such as uniformity and yield. One of skill in the artwill appreciate the limitations and benefits of applying the differenttechniques for transferring patterns to the media device 750/850 and canappreciate the variations that can be applied to such techniques. Suchvariations are contemplated as being within the scope of the presentinvention.

In other embodiments where patterned media is employed, similarly tocontinuous media, the recording media can be a media other than a phasechange material or a polarity-dependent memory layer. For example, themedia device can be a charge storage-type media. Charge storage mediastores data as trapped charges in dielectrics. Thus, for charge storagemedia, the media would be a dielectric material that traps charges whenin a written state. Changing media back to an unwritten state simplyrequires the removal of the trapped charges. For instance, a positivecurrent can be used to store charges in media. A negative current canthen be used to remove the stored charges from media.

Isolating cells within an inhibiting matrix can substantially minifyshunting, thereby potentially increasing a signal-to-noise ratio. Ahigher signal-to-noise ratio can improve the robustness of a systemapplying a multi-bit recording scheme for recording data. To store twobits per indicia, a minimum of four resistivity levels are required (00,01, 10, 11). Patterning media to form cells electrically isolated fromone another can provide sufficient signal-to-noise ratio to achieve fourlevel recording in recording medias comprising GST or other phase changematerials, as well as polarity-dependent memory materials.

Pattern Media Defining Servo and Timing Information

Inclusion of a patterning step can provide the benefit of enabling servoinformation and timing information to be predefined within the overallpattern. Pre-defined servo information and timing information cansimplify a manufacturing process by eliminating the need to write servoand timing information to the continuous media. Including pre-definedservo information and timing information can also reduce variation inpositioning of such information, simplifying a servo technique to makefinding and recovering data more robust.

In an embodiment of a system and method for defining information in apatterned media in accordance with the present invention, timinginformation can be included in a pitch of a pattern. For example, if aregion between cells is a relatively high resistance value (R_(max)) andthe recording media are always programmed to have a lower resistancevalue than the region between cells (e.g., in a range such as 0.1R_(max), to 0.8 R_(max)) then the position of a tip over a cell can bedetected by sensing that a current flowing from the tip to the recordingmedia is above a minimum value. In an embodiment, the clock informationcan be twice (or some other multiple) the bit frequency so thatfrequency discrimination is possible for detecting the clock incombination with resistance level shifting. This provides a simpletechnique for self-clocking to control the writing and reading of dataeven where the scanning velocity jitters in time.

In an alternative embodiment, the tip current can be sensed by acomparator circuit to form a digital signal that measures as a “high”value when the tip is over a cell and measures as a “low” value when thetip is in between cells. When moving the tip relative to the media, theperiod of a digital signal can be measured and used as a feedback signalto control the velocity. For more accuracy, the output from severalcomparator circuits from multiple tips can be averaged.

A patterning step can be applied to define myriad different featurescorresponding to servo and timing information. Such features can bedesigned into the master pattern simply by eliminating cells to encodedigital information. Read-only (RO) cells can be patterned in place ofread/write cells. RO cells could consist of a fully conductive regionforming a low resistance between the media surface and the underlay orsubstrate. In one embodiment, the RO cell resistance can be set to avalue lower than the lowest possible indicium in a cell having recordingmedia. The RO cell or a series of RO cells inserted in a line of datacells can be detected easily. Further the detection signal to noiseratio can be improved. Track ID information and sync marks can beincluded inline with the data cells to assist the servo with positioningverification and prevent errors in data writing and reading. By storingthe Track ID and sync patterns in the RO cell patterns, it is possibleto verify that the tip is always on a desired track and that the tipstarts at the proper down track region. Several copies of the track IDand sync pattern can be spaced along the down track direction to ensurethat the tip stays aligned with the cells.

An alternative embodiment of a system and method can be applied havingreduced mask steps relative to methods and systems including RO cells.In such an embodiment some media cells can be programmed so that thecells are easily changeable and therefore function as “write-once” (WO)cells. For example, recording media including a polarity-dependentmemory layer can be written to form very low resistances (e.g., on theorder of 100 ohms with large currents of about 1 mA—normal writecurrents are a factor of 100 less). In such embodiments, off-track servoburst patterns can be employed to align tips and help identifydown-track position. With the aid of servo tracking, specific groups ofcells can be formatted by permanently writing the desired track ID andother information into the media cells. Such methods and systems canachieve improved signal-to-noise ratio and improve the efficiency ofencoding sync and ID information over the technique of encoding sync andID information by omitting data cells. Such methods can also be used toenhance the servo burst patterns by applying large write currents at atip's initial traverse over such regions, improving read-back quality.

A patterning step can allow for adding special features such as, forexample, framing marks, synchronization (sync) marks, trackidentification (ID) codes, and servo burst patterns for measuringposition error signals (PES) to be either intermixed with data patternsor optionally placed in separate regions for dedicated servo use. Aframing mark allows the identification of the beginning and end of adata track. A sync mark allows the identification of a region of a datatrack. A track ID allows identification of an individual track in agroup of tracks. An embodiment of one such servo and timing informationarrangement within one or more tracks is represented in FIG. 11A. Therepresentation includes PES blocks for maintaining a tip aligned ontrack, sync mark blocks for timing, and track ID blocks. The servo andtiming information can be arranged to achieve a desired or necessarylevel of processing for timing and positioning. The servo and timinginformation arrangement illustrated in the representation of FIG. 11A isjust one of myriad different arrangements. In other embodiments, more orfewer blocks can be arranged similarly or differently to achieve adesired result. For example, where a dedicated servo structure is usedin parallel with a data storage structure, a data storage structuredesign may be desired having fewer blocks dedicated to servo and timinginformation. A degree of precision in forming a plurality of tips canalso influence servo and timing arrangement, making use of suchinformation as PES blocks more or less important. Further, thearrangement is not meant to imply a necessary combination of elements.For example, a track ID block need not necessarily be preceded andsucceeded by PES blocks, or a user data block need not include multiplesync mark blocks.

FIG. 11B is an expanded view of a track ID block arranged within a userdata block across a plurality of tracks. As shown, the user data blockcan include two levels of information (a low resistance state 990 and ahigh resistance state 992); however, as described above each cell (ordomain in a mixed continuous/patterned media as described below) canactually have a plurality of resistance levels or ranges of resistancestates to store two or more bits in a single cell (or domain). The trackID block shown includes a pattern of low resistance cells (or domains)994 that when read across the length of the track can be used todetermine a track number. The track ID block can span as much of theavailable surface along a track as is necessary to satisfactorilyidentify a track, so that the track ID block can contain fewer or morecells (or domains) than is shown in FIG. 11B.

FIGS. 11C and 11D are expanded views of examples of a sync mark within auser data block across a plurality of tracks. The sync marks canarranged preferably (though not necessarily) in a uniform pattern acrosstracks; however, the sync marks can contain far more combinations of lowresistance cells (or domains) along the track-wise length of the syncmark block than can be shown. As shown in FIG. 11D, the low resistancecells (or domains) need not be arranged adjacent to one another. Thearrangement and number of low resistance cells (or domains) defining async mark within a sync mark block can be determined based a pluralityof factors to produce a signal with preferably a high signal-to-noiseratio. Further, the length of the sync mark block can vary from the syncmark blocks shown in FIGS. 11C and 11D.

A servo system can include across track position sensing mechanism tomaintain tips centered on a track (and therefore on the cells ordomains). A common method of providing servo position information in thedisk drive industry is to insert A-B-C-D bursts of servo patterns everyN data bits to allow demodulation of a servo position error signal(PES). These methods require placing groups of marks at differentoff-track distances from the data track. When the tip passes thoughthese regions the relative amplitudes or timing information can bedemodulated to form a signal that is proportional to the off-trackdistance. In the absence of patterned media, these marks must be writteninto the media using a servo writer or self servo writing methods. Oftenthis requires additional position sensors to place the marks and can addto the complexity of the storage device. FIG. 11E is an expanded view ofone such PES burst arrangement having low resistance cells (or domains)corresponding to A-B-C-D bursts, each burst in the arrangement beingrepresented by two low resistance cells (or domains) adjacent to oneanother along the track.

An alternative embodiment of an across track position sensing mechanismto maintain tips centered on cells is illustrated in FIG. 11F.Patterning of the media can enable the definition of lines of low,varying, or varied resistance. In the servo arrangement of FIG. 11Fincludes four PES lines 996 arranged in a zig-zag pattern, a first andsecond line (from left to right on the page) being patterned inverse toone another and a third and fourth line being patterned inverse to oneanother and out of phase relative to the first and second line. A tiptraversing a track can encounter the sync mark and detect the timingbetween the sync mark and the lines (which varies across the track asthe line zig-zags) to determine where along the lines the tip ispositioned, and thus where across the track(s). The PES arrangements ofFIGS. 11E and 11F are merely examples, and upon illumination by theseteachings, one of ordinary skill in the art will appreciate the myriaddifferent arrangements of PES cells (or domains), lines or otherfeatures to identify fine positioning of a tip across one or more tracksthat can be employed in embodiments of systems and methods in accordancewith the present invention.

Still further, isolating cells within an inhibiting matrix can reducejitter noise, because each transition between bits is predefined,reducing the propagation of error that occurs between writing andreading due to vibration and movement of the tip. The noise andvariability of a pre-defined pattern can be notably smaller than thenoise and variability attributable to the mechanics of the tip.

Partially Patterned Media

In still further embodiments, it may be desired that a patterning stepbe included to define servo information and timing information, whileproviding a continuous media for storing data, thereby eliminating theneed to write servo and timing information to the continuous media,while allowing a maximum density of the data storage to be limited bythe continuous media.

As above, servo and timing patterns can be defined in the media device,in preferred embodiments, by applying nano-imprinting lithography (NIL),or alternatively using some other process technique or class of processtechniques, including optical lithography techniques such as extremeultra-violet lithography (EUVL), X-ray lithography, e-beam lithography,and ion beam lithography. A technique can be chosen based on a trade-offof benefits between storage density and the cost and robustness of thepattern transfer technique. One of skill in the art will appreciate thelimitations and benefits of applying the different techniques fortransferring servo and timing patterns to the media device and canappreciate the variations that can be applied to such techniques. Suchvariations are contemplated as being within the scope of the presentinvention.

In such embodiments including a hybrid solution of patterned servo andtiming information and continuous media, the recording media can be aphase change material or a polarity-dependent memory layer, as describedabove, or alternatively some other media such as a charge storage-typemedia.

As above, in an embodiment of a system and method for defininginformation in a patterned media in accordance with the presentinvention, timing information can be included in a pitch of a pattern.For example, if a region between cells is a relatively high resistancevalue (R_(max)) and the recording media are always programmed to belower than the region between cells (e.g., in a range such as 0.1R_(max) to 0.8 R_(max)) then the position of a tip over a cell can bedetected by sensing that a current flowing from the tip to the recordingmedia is above a minimum value. This provides a simple technique forself-clocking to control the writing and reading of data even where thescanning velocity jitters in time.

In an alternative embodiment, the tip current can be sensed by acomparator circuit to form a digital signal that measures as a “high”value when the tip is over a cell and measures as a “low” value when thetip is in between cells. When moving the tip relative to the media, theperiod of a digital signal can be measured and used as a feedback signalto control the velocity. For more accuracy, the output from severalcomparator circuits from multiple tips can be averaged.

Read only (RO) cells can also be patterned in place of read/write cells.Read only cells could consist of a fully conductive region forming a lowresistance between the media surface and the underlay or substrate. Inone embodiment, the RO cell resistance can be set to a value lower thanthe lowest possible indicium in a cell having recording media. The ROcell or a series of RO cells inserted in a line of data cells can bedetected easily. Further the detection signal to noise ratio can beimproved. Track ID information and sync marks can be included inlinewith the data cells to assist the servo with positioning verificationand prevent errors in data writing and reading. By storing the Track IDand sync patterns in the RO cell patterns, it is possible to verify thatthe tip is always on a desired track and that the tip starts at theproper down track region. Several copies of the track ID and syncpattern can be spaced along the down track direction to ensure that thetip stays aligned with the cells.

As above, an alternative embodiment of a system and method can beapplied having reduced mask steps relative to methods and systemsincluding RO cells. In such an embodiment some media cells can beprogrammed so that the cells are easily changeable and thereforefunction as “write-once” (WO) cells. For example, recording mediaincluding a polarity-dependent memory layer can be written to form verylow resistances (e.g., on the order of 100 ohms with large currents ofabout 1 mA—normal write currents are a factor of 100 less). In suchembodiments, off-track servo burst patterns can be employed to aligntips and help identify down-track position. With the aid of servotracking, specific groups of cells can be formatted by permanentlywriting the desired track ID and other information into the media cells.Such methods and systems can achieve improved signal-to-noise ratio andimprove the efficiency of encoding sync and ID information over thetechnique of encoding sync and ID information by omitting data cells.Such methods can also be used to enhance the servo burst patterns byapplying large write currents at a tip's initial traverse over suchregions, improving read-back quality.

As above, a patterning step can allow for adding special features suchas, for example, framing marks, sync marks, track identification codes(track ID), and servo burst patterns to be either intermixed with thedata patterns or optionally placed in separate regions for dedicatedservo use. A framing mark allows the identification of the beginning andend of a data track. A sync mark allows the identification of a regionof a data track. A track ID allows identification of an individual trackin a group of tracks. All of these patterns can be designed into themaster pattern simply by eliminating cells to encode digitalinformation.

Referring back to FIG. 11A, in such embodiments where a hybrid solutionof patterned servo and timing information and continuous media areemployed, the user data blocks can comprise a continuous media;therefore, few or no cells are defined within the user data blocks.Rather, domains are defined across the user data block. Use of acontinuous media can allow for increased densities of user data, atleast along the length of the track in the direction of traverse, thoughnot necessarily across the width of the track.

Forming Metal Cantilevered Tips

Embodiments of cantilevered tips and methods of forming suchcantilevered tips for use with systems and methods in accordance withthe present invention are shown in FIGS. 9A and 9B. Such embodiments oftips 242/342 can be self-deployable and can include contact surfaces243/343 comprising a conductive metal or metal alloy. The tips 242/342are operably associated with a platform 244 by a cantilever 241, and arebiased such that the tips 242/342 are urged against the media surface(e.g., a lubricant 151 on the surface). The biased cantilever 241 isconnected at a proximal end and disconnected at a distal end associatedwith the tip 242/342 so that the tip 242/342 can move in the verticalplane relative to the platform 244 while remaining in electricalcommunication with the media device 150/350.

Referring to FIG. 9A, an embodiment of a tip 242—referred to herein as a“reinforced” tip 242—is shown in electrical communication with a mediadevice 150 such as shown in FIG. 1A through 1C, having a recording media156 comprising a phase change material (e.g., GST). The tip 242 isconnected with a tip platform 244 by a cantilever 241 comprising amaterial capable of having a stress gradient applied such that thecantilever 241 forms a leaf spring capable of applying a bias against asurface of the media device 150. The tip 242 includes a contact surface243. The electrically conductive layer forming the contact surface 243is electrically conductive and preferably comprises a layer of metal,such as platinum, iridium, alloys of such metals, or some other metal ormetal alloy. The contact surface 243 has a thickness ranging, inembodiments, approximately between 10 nm and 200 nm. A posterior surface245 of the tip 242 behind the contact surface 243 (relative to thetip-media surface interface) can have an indented shape, the indentationwithin the posterior surface 245 being approximately the shape of thecontact surface 243. A portion of silicon 174 or other reinforcingmaterial is disposed over the posterior surface 245 to further providemechanical strength to the tip 242, resisting deformation and bending ofthe tip 242 due to the forces present at the tip-media surfaceinterface. A layer of insulating dielectric 175, for example silicondioxide, is shown disposed between the silicon and the posterior surface245. The reliability of such a reinforced tip 242 is significantly high,resisting wear and damage during use.

The cantilever 241 operably connecting the reinforced tip 242 with a tipplatform 244 can comprise myriad different metals and metal alloys. Forexample, the cantilever 241 can comprise nickel, chrome, molybdenum,some other metals and alloys. A cantilever material should be chosenhaving high yield strength, good electrical conductivity, andcompatibility with coincident processing steps applied duringmanufacturing of the reinforced tips 242 and tip platforms 244 (andassociated structures). The cantilever can have a thickness ranging, inembodiments, approximately between 100 nm and 1000 nm, and preferablybetween 250 nm and 500 nm.

FIG. 9A shows the reinforced tip 242 positioned so that the reinforcedtip 242 contacts the surface of the media device 150. The reinforced tip242 and media device 150 comprise a portion of an embodiment of a systemin accordance with the present invention. However, in other embodimentsthe system can comprise the reinforced tip 242 operably associated withsome other media device, such as a patterned media device having arecording media comprising GST, or a recording media comprising apatterned or unpatterned polarity-dependent memory layer. A plurality ofmedia devices have been described herein, and myriad other media devicescan result from such teachings. All such media devices are intended tobe within the scope of embodiments of systems and methods of the presentinvention. Such systems and methods are likewise not intended to belimited to the specific geometries and structure shown in FIG. 9A, asvariations will be obvious to one of skill in the art upon understandingthe teachings contained herein.

Referring to FIG. 9B, an alternative embodiment of a tip 342—referred toherein as a “hollow” tip 342—is shown in electrical communication with amedia device 350 such as shown in FIGS. 5A through 5C, having arecording media 380 comprising a polarity-dependent memory layer. Asabove, the tip 342 is connected with a tip platform 244 by a cantilever241 comprising a material capable of having a stress gradient appliedsuch that the cantilever 241 forms a leaf spring capable of apply a biasagainst a surface. The tip 342 includes a contact surface 343. Thecontact surface 343 is electrically conductive and preferably comprisesa layer of metal, such as platinum, iridium, alloys of such metals, orsome other metal or metal alloy. A posterior surface 345 of the tip 342can have an indented shape, the indentation within the posterior surface345 being approximately the shape of the contact surface 343. However,the tip 342 does not have a silicon portion 174 reinforcing the contactsurface 343, and as such the posterior surface 345 can be considered“hollow” when compared with the posterior surface 243 of the tip 242 ofFIG. 9A. The electrically conductive layer forming the contact surface343 has a thickness ranging, in embodiments, approximately between 10 nmand 200 nm. The hollow tip 342 has significantly lower mass than thereinforced tip 242. A tip having lower mass can have a higher resonancewith the media device, and as such can operate at a higher speed.Increased speed can provide higher data transfer rate and an advantagewhere short access time is desired.

The cantilever 241 operably connecting the hollow tip 342 with a tipplatform 244 can comprise myriad different metals and metal alloys. Forexample, the cantilever 241 can comprise nickel, chrome, molybdenum,some other metals and alloys. A material should be should be chosenhaving high yield strength, good electrical conductivity, andcompatibility with coincident processing steps applied duringmanufacturing of the hollow tips 342 and tip platforms 244 (andassociated structures). The cantilever can have a thickness ranging, inembodiments, approximately between 100 nm and 1000 nm, and preferablybetween 250 nm and 500 nm.

FIG. 9B shows the hollow tip 342 positioned so that the hollow tip 342contacts the surface of the media device 350. The hollow tip 342 andmedia device 350 comprise a portion of an embodiment of a system inaccordance with the present invention. However, in other embodiments thesystem can comprise the hollow tip 342 operably associated with someother media device, such as a patterned media device having a recordingmedia comprising polarity-dependent material layer, or a recording mediacomprising patterned or unpatterned GST. A plurality of media deviceshave been described herein, and myriad other media devices can resultfrom such teachings. All such media devices are intended to be withinthe scope of embodiments of systems and methods of the presentinvention. Such systems and methods are likewise not intended to belimited to the specific geometries and structure shown in FIG. 9A, asvariations will be obvious to one of skill in the art upon understandingthe teachings contained herein.

Tips 242/342 such as those described above can be formed by a number ofmanufacturing steps applying conventional semi-conductor processtechniques. For example, an embodiment of a method of forming a tip 242such as shown in FIG. 9A is illustrated in the stack diagrams of FIGS.10A-10F, which show an example of a series of process steps for formingthe structure shown in FIG. 9A. The method can include growing a layerof thermal oxide b over a silicon substrate a. The thermal oxide b canbe grown, for example in a diffusion process, using well-known diffusionprocess techniques. A material having high selectivity relative tothermal oxide (such as silicon nitride) can be deposited over thethermal oxide b to form a hardmask layer c. A pattern can be definedwithin the hardmask c using well-known photolithography techniques. Thepattern can define the masked tip area surrounded by an unmasked cavityarea, and the wafer can be isotropically etched so that a nascent tipstructure 170 surrounded by a shallow cavity is formed. A second layerbb of thermal oxide is grown, consuming additional silicon that helpform a structure 170 defining the sharp tip, and forming a film stack asshown in FIG. 10A.

An oxide etch removes the second layer bb of thermal oxide and causesthe hard mask c positioned over the tip structure 170 to fall off,leaving a silicon tip. During this oxide etching step, the oxide layeris undercut under the hard mask layer c, removing the hanging portion ofthe oxide layer. In some cases additional thermal oxidation and oxideetching steps can be applied in order to adjust the height of thesilicon tip and/or the radius of curvature of the silicon tip.

Referring to FIG. 10B, a third layer bbb of thermal oxide can be grown.At the next step the hard mask c is removed from the wafer usingselective etching, which does not affect silicon dioxide and thereforedoes not change the shape of the sharp tip. For example, a siliconnitride hard mask can be removed in phosphoric acid which etches neithersilicon dioxide nor silicon, leaving the thermal oxide layers b/bbb overthe tip structure 170. A first layer d of metal can be deposited, forexample by sputtering. This first layer d covers the tip area, and isalso referred to herein as “tip metal.” Thickness of the tip metal d ischosen to provide a required radius of curvature of the contact surface243 of the tip 242. The tip metal d has high electrical conductivity, iswear resistant and chemically inert. Platinum, iridium, refractorymetals, and combination of these metals can be used in a tip metalmaterial. The tip metal d can include an adhesion layer in order toprovide strong mechanical connection to the underlayer bbb of thermaloxide. The tip metal d can be etched to form the contact surface 243 ofthe tip 242. Alternatively, a lift-off process also can be used forpatterning of the tip metal d. Referring to FIG. 10C, a second layer eof metal (also referred to herein as the cantilever metal) can bedeposited over the stack and etched to form the cantilever pattern.Preferably, the cantilever pattern is formed inside the shallow cavityarea 180. In this case the cantilever does not have steps after release.The cantilever metal e overlaps with the tip metal d. As shown in FIG.10D, once the cantilever pattern is defined, a dielectric layer f (alsoreferred to herein as a stabilization film) is deposited on top of thecantilever pattern. The dielectric is preferably silicon dioxide orsilicon nitride deposited by plasma enhanced chemical vapor deposition(PECVD) at an elevated temperature (typically 350-400 degrees C.).

Exposure of the cantilever metal e to the dielectric deposition processprovides several benefits. First, an elevated temperature duringdielectric deposition process causes inter-diffusion of metal atomsbetween the tip metal d and the cantilever metal e, providing goodmechanical and electrical connection between the tip metal d andcantilever metal e. Second, exposure of the cantilever metal e to anelevated temperature during dielectric deposition and subsequent coolingdown causes significant stresses at the interface between the cantilevermetal e and the thermal oxide b/bbb and between the cantilever metal eand the deposited dielectric layer f. These stresses have athermo-mechanical nature and occur because of a difference in thermalexpansion coefficients between the cantilever metal e and the thermaloxide b/bbb and the deposited dielectric layer f. A magnitude of thethermo-mechanical stress is high enough to overcome or significantlychange the stress gradient in the cantilever metal e created by thedeposition process. The thermo-mechanical stress in the cantilever metale created during the dielectric deposition process is very repeatable,because it is determined by the temperature difference between ambienttemperature and elevated temperature used during the deposition process.Therefore, deposition of dielectric layer allows stabilization of thecantilever metal e parameters and decreases the effect of stressgradient variation in the cantilever metal e as deposited due totechnological process variations. Third, as can be seen from FIG. 10D, abottom portion of the cantilever metal e is in mechanical contact withthe bulk of the wafer and the top layer of the cantilever metal econtacts a relatively thin layer of deposited dielectric f. Therefore,the top and the bottom portions of the cantilever metal e are exposed todifferent conditions and it can be expected that there will be largerthermo-mechanical deformation of the bottom portion of the cantilevermetal e than deformation of the top portion of the cantilever metal e.This creates a reproducible stress gradient in the cantilever metal ewhich can be used to obtain a desired out of plane initial bending ofthe cantilever after release. In other embodiments, alternative methodsof creating a desired stress gradient in the cantilever metal e andenforcing good mechanical and electrical connections between the tipmetal d and the cantilever metal e can be used. Such methods can beused, either together with the described process step of dielectricdeposition or in substitution of the dielectric deposition step.Annealing at an elevated temperature in a specified atmosphere, forexample, in an inert atmosphere of argon or nitrogen is an example ofsuch an alternative method. One of ordinary skill in the art willappreciate the different methods known in the art for forming such astress gradient.

The wafer can be patterned and etched to remove a portion of thedeposited oxide layer f and the thermal oxide layer bbb around thecantilever and the tip structure. Referring to FIG. 10E, etching ofdielectric layers f and bbb is followed by silicon etching. Preferably,silicon etching contains two steps. The first step creates a trencharound the cantilever and the tip, and the second step undercuts andreleases the cantilever. Reactive ion etching (RIE) is preferably usedin the first step. Wet anisotropic etching of silicon is preferably usedin the second step. (For example, aqueous solutions of potassiumhydroxide can be used at the second step.) The deposited oxide layer fcan serve as a mask during the second step to protect the cantilevermetal e and the tip metal d. Wet anisotropic etching can provide bettercontrol of the undercut and, therefore, better control of cantileverlength and bending. Alternatively, isotropic etching of silicon can beused at the second step. Preferably, the same pattern defined fordielectric etching is used also in the first step and in the secondstep.

Depending on the mask layout used for silicon etching, the resultingstructure can have a piece of silicon 174 under the tip 170 as shown inFIG. 10E or have a hollow tip as described above and shown in FIG. 9B. Aknown in the art technique utilizing corner compensation structures canbe used to preserve a piece of silicon 174 and a portion of thermaloxide bbb under the tip 170 at the end of etching.

The final step in the cantilever/tip fabrication process is wet etchingof dielectric layers. It is used to remove the exposed thermal oxide bbbfrom the underside of the cantilever 241 and the deposited oxide f,releasing the cantilever 241 which when released is urged by the stressgradient to form an approximately arcuate shape, like a leaf spring.Further, removing the deposited oxide f exposes the contact surface d ofthe tip 242.

Alternatively, an embodiment of a method of forming a tip 342 such asshown in FIG. 9B is illustrated in the stack diagrams of FIGS. 10G-10I,which show an example of a series of process steps for forming thestructure shown in FIG. 9B. Once the second layer of metal e has beendeposited and etched, as described above with regards to FIGS. 10A-10C,a layer of deposition oxide f, for example such as PECVD oxide, can beformed over the film stack such that a stress gradient is formed acrossthe cantilever structure. The wafer can be patterned and etched toremove a portion of the deposited oxide layer f and the thermal oxidelayer bbb around the cantilever and the tip structure. Referring to FIG.10H, wet anisotropic etching of silicon can be used to undercut thecantilever 241. Alternatively, an isotropic etch can then be performedto undercut and define the tip 342 and the cantilever 241. The filmstack can be etched such that all of the silicon is removed from behindthe contact surface 243 of the tip 342. Referring to FIG. 10I, anisotropic etch can then be performed to remove the deposited oxide f andthe exposed thermal oxide bbb under the tip 342 and cantilever 241. Theresulting structure has a hollow tip 343 at the end of the cantilever241 which when released is urged by the stress gradient to form anapproximately arcuate shape, like a leaf spring. Further, removing thedeposited oxide f exposes the contact surface d of the tip 342. The tip342 is a hollow structure as shown in FIG. 9B.

While process steps have been described with some level of specificityin providing detailed descriptions of FIGS. 10A-10F, one of skill in theart will appreciate that multiple different variations in the processsteps illustrated and described will become apparent to those skilledpersons after reviewing the present teachings. The scope of the presentinvention is therefore not intended to be limited to those processsteps, those film stacks, and those structures described coincident withthe descriptions of particular embodiments of methods for forming tipstructures as described above and shown in FIGS. 9A and 9B.

The foregoing description of the present invention have been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise forms disclosed.Many modifications and variations will be apparent to practitionersskilled in this art. The embodiments were chosen and described in orderto best explain the principles of the invention and its practicalapplication, thereby enabling others skilled in the art to understandthe invention for various embodiments and with various modifications asare suited to the particular use contemplated. It is intended that thescope of the invention be defined by the following claims and theirequivalents.

1. A method of forming a patterned media for use in a high density datastorage device, the method comprising the steps of: depositing aconductive layer; depositing a dielectric layer over the conductivelayer; depositing a photoresist layer; transferring a pattern to thephotoresist layer by nano-imprint lithography, the pattern defining aplurality of holes; etching the dielectric layer using an etch processhaving sufficiently high selectivity to the conductive layer such thatthe plurality of holes is transferred through the dielectric layer toexpose portions of the conductive layer; depositing a recording mediasuch that a first portion of the recording media is deposited within theholes so that the first portion of the recording media is in electricalcommunication with the conductive layer and a second portion of therecording media is deposited over a portion of the dielectric layer;removing the second portion of the recording media disposed over thedielectric layer; depositing a metal such that the a first portion ofthe metal is deposited within the holes and a second portion of themetal is deposited over a portion of the dielectric layer; and removingthe second portion of the metal disposed over the dielectric layer. 2.The method of claim 1, wherein the recording media is a phase changematerial.
 3. The method of claim 1, wherein the recording media is apolarity dependent material.
 4. The method of claim 1 furthercomprising: providing a substrate; wherein the conductive layer isdisposed over the substrate.
 5. The method of claim 4 furthercomprising: depositing an insulating layer over the substrate; whereinthe insulating layer is disposed between the substrate and theconductive layer.
 6. The method of claim 1 wherein the nano-imprintlithography is one of thermal nano-imprint lithography, ultra-violetnano-imprint lithography, and step-flash imprint lithography.
 7. Themethod of claim 1 wherein removing the second portion of the recordingmedia disposed over the dielectric layer further includes one ofchemical-mechanical polishing the second portion of the recording mediaand ion milling the second portion of the recording media.
 8. The methodof claim 1 wherein removing the second portion of the metal disposedover the dielectric layer further includes chemical-mechanical polishingthe second portion of the metal.
 9. The method of claim 1 wherein thedielectric layer includes one of oxide and silicon nitride.
 10. Themethod of claim 1 wherein removing the second portion of the metaldisposed over the dielectric layer substantially planarizes a surface ofthe media; and further comprising depositing an over-layer, wherein theover-layer is disposed over the planarized surface of the media.
 11. Themethod of claim 1 wherein etching the dielectric layer such that theplurality of holes are formed includes causing sidewalls of the holes totaper such that the plurality of holes narrow toward an interface of thedielectric layer and the conductive.
 12. A method of forming a media foruse in a high density data storage device, the method comprising thesteps of: depositing a conductive layer; depositing a recording mediaover the conductive layer; depositing a metal layer over the recordingmedia so that the recording media and the conductive layer areunderlying layers; depositing a photoresist layer; transferring apattern to the photoresist layer using nano-imprint lithography, thepattern including a plurality of holes; etching the metal layer by usingan etch process having sufficiently high selectivity to one of theunderlying layers such that a plurality of cells is formed withoutremoving the one of the underlying layers from within the cells;depositing a dielectric material such that a first portion of thedielectric material is deposited within the cells so that the firstportion of the dielectric material isolates the cells across the metallayer and a second portion of the dielectric material is deposited overthe metal; removing the second portion of the dielectric materialdisposed over the metal.
 13. The method of claim 12, wherein therecording media is a phase change material.
 14. The method of claim 12,wherein the recording media is a polarity dependent material.
 15. Themethod of claim 12 further comprising: providing a substrate; whereinthe conductive layer is disposed over the substrate.
 16. The method ofclaim 15 further comprising: depositing an insulating layer over thesubstrate; wherein the insulating layer is disposed between thesubstrate and the conductive layer.
 17. The method of claim 12 whereinthe nano-imprint lithography is one of thermal nano-imprint lithography,ultra-violet nano-imprint lithography, and step-flash imprintlithography.
 18. The method of claim 12 wherein removing the secondportion of the recording media disposed over the dielectric layerfurther includes chemical-mechanical polishing the second portion of therecording media.
 19. The method of claim 12 wherein removing the secondportion of the metal disposed over the dielectric layer further includeschemical-mechanical polishing the second portion of the metal.
 20. Themethod of claim 12 wherein removing the second portion of the metaldisposed over the dielectric layer substantially planarizes a surface ofthe media; and further comprising depositing an over-layer, wherein theover-layer is disposed over the planarized surface of the media.
 21. Themethod of claim 12 wherein etching the dielectric layer such that theplurality of holes are formed includes causing sidewalls of the holes totaper such that the plurality of holes narrow toward an interface of thedielectric layer and the conductive.
 22. A method of forming a media foruse in a high density data storage device, the method comprising thesteps of: depositing a conductive layer; depositing a dielectric layerover the conductive layer; depositing a photoresist layer; transferringa pattern to the photoresist layer by nano-imprint lithography, thepattern defining a plurality of holes; etching the dielectric layer byusing an etch process having sufficiently high selectivity to theconductive layer such that the plurality of holes is transferred throughthe dielectric layer to expose the conductive layer without removing theconductive layer, the plurality of holes being tapered so that theplurality of holes narrow toward an interface of the dielectric layerand the conductive layer; depositing a recording media such that a firstportion of the recording media is deposited within the holes so that thefirst portion is in electrical communication with the conductive layerand a second portion of the recording media is deposited over a portionof the dielectric layer; removing the second portion of the recordingmedia disposed over the dielectric layer; depositing a metal layer suchthat the a first portion of the metal layer is deposited within holesand a second portion of the metal is deposited over a portion of thedielectric layer; and removing the second portion of the metal layerdisposed over the dielectric layer.
 23. The method of claim 22, whereinthe recording media is a phase change material.
 24. The method of claim22, wherein the recording media is a polarity dependent material. 25.The method of claim 22 wherein removing the second portion of the metaldisposed over the dielectric layer substantially planarizes a surface ofthe media; and further comprising depositing an over-layer, wherein theover-layer is disposed over the planarized surface of the media.
 26. Themethod of claim 10 further comprising: providing a substrate; depositingan insulating layer over the substrate; wherein the insulating layer isdisposed between the substrate and the conductive layer.